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Leshan Radio Company
Leshan Radio Company

S-L2SA1365GLT1G Datasheet Preview

S-L2SA1365GLT1G Datasheet

General Purpose Transistor

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S-L2SA1365GLT1G pdf
LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
DESCRIPTION
L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor,
designed with high collector current and small VCE(sat).
F.EATURE
●Small collector to emitter saturation voltage.
VCE(sat)=-0.2V typ
●Excellent linearity of DC forward current gain.
●Super mini package for easy mounting
●High collector current ICM=-1A
●High gain band width product fT =180MHz typ
●We declare that the material of product compliance with RoHS requirements.
●We declare that the material of product is ROHS compliant
●S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements, AEC-Q101 Qualified and PPAP Capable.
L2SA1365*LT1G
S-L2SA1365*LT1G
3
1
2
SOT–23
APPLICATION
Small type motor drive, relay drive, power supply.
MAXIMUM RATINGS(Ta=25℃)
Symbol
Parameter
VCBO Collector to Base voltage
VCEO Collector to Emitter voltage
VEBO Emitter to Base voltage
I O Collector current
Pc Collector dissipation
Tj Junction temperature
Tstg Storage temperature
Ratings
-25
-20
-4
-7 00
150
+125
-55~+125
Unit
V
V
V
mA
mW
3
COLLECTOR
1
BASE
ORDERING INFORMATION
2
EMITTER
Device
Marking
L2SA1365ELT1G
S-L2SA1365ELT1G
L2SA1365ELT3G
S-L2SA1365ELT3G
L2SA1365FLT1G
S-L2SA1365FLT1G
L2SA1365FLT3G
S-L2SA1365FLT3G
L2SA1365GLT1G
S-L2SA1365GLT1G
L2SA1365GLT3G
S-L2SA1365GLT3G
AE
AE
AF
AF
AG
AG
Shipping
3000/Tape & Reel
10000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parameter
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Symbol
Test conditions
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IEBO
hFE
VCE(sat)
fT
I C=-10μA , I E =0
I E=-10μA , I C =0
I C=-100μA ,R BE=∞
V CB=-25V, I E=0mA
V EB=-2V, I C=0mA
V CE=-4V, I C=-100mA
I C=-500mA ,IB=-25mA
V CE=-6V, I E=10mA
※) It shows hFE classification in below table.
Item
EFG
hFE Item
150~300 250~500 400~800
Limits
Min Typ
-25 -
-4 -
-20 -
--
--
150 -
- -0.2
- 180
Max
-
-
-
-1
-1
800
-0.5
-
Unit
V
V
V
μA
μA
V
MHz
Rev.O 1/3



Leshan Radio Company
Leshan Radio Company

S-L2SA1365GLT1G Datasheet Preview

S-L2SA1365GLT1G Datasheet

General Purpose Transistor

No Preview Available !

S-L2SA1365GLT1G pdf
LESHAN RADIO COMPANY, LTD.
L2SA1365*LT1G
S-L2SA1365*LT1G
Rev.O 2/3


Part Number S-L2SA1365GLT1G
Description General Purpose Transistor
Maker Leshan Radio Company
Total Page 3 Pages
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