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Leshan Radio Company
Leshan Radio Company

S-LBAS516T1G Datasheet Preview

S-LBAS516T1G Datasheet

High-speed Diode

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S-LBAS516T1G pdf
LESHAN RADIO COMPANY, LTD.
High-speed Diode
DESCRIPTION
The LBAS516T1 is a high-speed switching diode fabricated in planar technology
and encapsulated in the SOD523(SC79) SMD plastic package.
FEATURES
· Ultra small plastic SMD package
· High switching speed: max. 4 ns
· Continuous reverse voltage: max. 75 V
· Repetitive peak reverse voltage: max. 85 V
· Repetitive peak forward current: max. 500 mA.
· We declare that the material of product compliance with RoHS requirements.
· S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
APPLICATIONS
· High-speed switching in e.g. surface mounted circuits.
LBAS516T1G
S-LBAS516T1G
1
2
SOD-523
1
CATHODE
2
ANODE
ORDERING INFORMATION
Device
Marking
Shipping
LBAS516T1G
S-LBAS516T1G
LBAS516T3G
S-LBAS516T3G
6
6
3000 Tape & Reel
10000 Tape & Reel
ELECTRICAL CHARACTERISTICS T j =25°C unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
V F forward voltage
I R reverse current
C d diode capacitance
t rr reverse recovery time
V fr forward recovery voltage
see Fig.2 I F = 1 mA
I F = 10 mA
I F =50 mA
I F = 150 mA
see Fig.4 V R = 25 V
V R =75 V
V R = 25 V; T j = 150 °C
V R = 75 V; T j = 150 °C;
f = 1 MHz; V R = 0; see Fig.5
when switched from I F=10mA to I R= 10mA;
R L= 100 ; measured at I R= 1 mA; see Fig.6
when switched from IF = 10 mA; tr = 20 ns; see Fig.7
MAX.
715
855
1
1.25
30
1
30
50
1
4
UNIT
mV
mV
V
V
nA
µA
µA
µA
pF
ns
1.75
V
THERMALCHARACTERISTICS
SYMBOL
PARAMETER
R th j-s
thermal resistance from junction to soldering point
Note 1. Soldering point of the cathode tab.
CONDITIONS
note 1
VALUE UNIT
120 K/W
Rev.O 1/4



Leshan Radio Company
Leshan Radio Company

S-LBAS516T1G Datasheet Preview

S-LBAS516T1G Datasheet

High-speed Diode

No Preview Available !

S-LBAS516T1G pdf
LESHAN RADIO COMPANY, LTD.
LBAS516T1G,S-LBAS516T1G
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V RRM
VR
IF
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
T s =90°C; note 1; see Fig.1
I FRM repetitive peak forward current
I FSM non-repetitivepeakforwardcurrent square wave; T j =25°C prior to
surge; see Fig.3
t =1µs
t =1 ms
t =1 s
P tot total power dissipation
T s =90°C; note 1
T stg storage temperature
Tj
Note
junction temperature
1. Ts is the temperature at the soldering point of the cathode tab.
MIN.
-65
MAX.
85
75
250
500
UNIT
V
V
mA
mA
4
1
0.5
500
+150
150
A
A
A
mW
°C
°C
500 300
400
200
300
200
100
100
0
0 50 100 150 200
T S ( °C )
Fig.1 Maximum permissible continuous forward current as a
function of soldering point temperature.
10 2
0
0
(1) T j = 150 °C; typical values.
(2)T j =25°C; typical values.
(3) T j =25°C; maximum values.
1
V F( V )
Fig.2 Forward current as a function of
forward voltage.
2
10
1
10 -1
0
Based on square wave currents;
T j =25°C prior to surge.
10
102 103 104
t P ( µs )
Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Rev.O 2/4


Part Number S-LBAS516T1G
Description High-speed Diode
Maker Leshan Radio Company
Total Page 4 Pages
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