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M-pulse Microwave
M-pulse Microwave

MP4TD1100 Datasheet Preview

MP4TD1100 Datasheet

Silicon Bipolar MMIC Cascadable Amplifier

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MP4TD1100 pdf
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
Features
High Dynamic Range Cascadable
50/75Gain Block
3dB Bandwidth: 50 MHz to 1.0 GHz
17.5 dBm Typical P1dB @ 0.7 Ghz
11 dB Typical Gain @ 0.5 GHz
3.5 dB Typical Noise Figure @ 1.0 GHz
Description
M-Pulse's MP4TD1100 is a high performance silicon
bipolar MMIC chip. The MP4TD1100 is designed for
use in 50or 75systems where a high dynamic range
gain block is required. Typical applications include
narrow and wide band IF and RF amplifiers in industrial
and military applications.
The MP4TD1100 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
14
12
10
8 Id=60mA
6
4
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0
0 .1
1
FREQUENCY (GHz)
10
MP4TD1100
Chip Outline Drawing1,2,3,4
RF Input
375 µ
(14.8 mil)
Feedback Capacitor
Ground
Optional RF Output & +5.5 Volts
375 µ (14.8 mil)
Notes: (unless otherwise specified)
1. Chip Thickness is 120 µm; 4.8 mils
2. Bond Pads are 40 µm; 1.6 mils typical in diameter
3. Output Contact & +DC Voltage Is Normally Made On
Backside Of Chip At Die Attach
4. Tolerance:µm .xx = ±.13; mil .x = ±.5
Ordering Information
Model No.
MP4TD1100G
MP4TD1100W
Type of Carrier
GEL PACK
Waffle Pack
Electrical Specifications @ TA = +25°C, Id = 60 mA, Z0 = 50
Symbol
Parameters
Test Conditions
Gp Power Gain (S212)
f = 0.1 GHz
Gp Gain Flatness
f = 0.1 to 0.7 GHz
f3dB 3 dB Bandwidth
ref 50 MHz Gain
SWRin Input SWR
f = 0.1 to 2.0 GHz
SWRout Output SWR
f = 0.1 to 2.0 GHz
P1dB Output Power @ 1dB Gain Compression f = 0.7 GHz
NF 50 Noise Figure
f = 1.0 GHz
IP3 Third Order Intercept Point
f = 1.0 GHz
tD Group Delay
f = 1.0 GHz
Vd Device Voltage
-
dV/dT Device Voltage Temperature Coefficient
-
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/°C
Min.
-
-
-
-
-
-
-
-
-
4.5
-
Typ.
12.5
+ 1.2
1.0
1.9
1.9
17.5
4.5
30.0
160
5.5
-8.0
Max.
-
-
-
-
-
-
-
-
-
6.5
-
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
PH (408) 432-1480 FX (408) 432-3440
1



M-pulse Microwave
M-pulse Microwave

MP4TD1100 Datasheet Preview

MP4TD1100 Datasheet

Silicon Bipolar MMIC Cascadable Amplifier

No Preview Available !

MP4TD1100 pdf
Silicon Bipolar MMIC Cascadable Amplifier
Absolute Maximum Ratings1
Parameter
Absolute Maximum
Device Current
100 mA
Power Dissipation2,3
650 mW
RF Input Power
+13 dBm
Junction Temperature
Storage Temperature
200°C
-65°C to +200°C
Thermal Resistance: θjms = 60°C/W
1. Exceeding these limits may cause permanent damage.
2. Mounting Surface Temperature (TMS)= 25 °C.
3. Derate at 16.7 mW/°C for TMS > 161°C
MP4TD1100
Typical Bias Configuration
Rbias
Vcc - Vd
Id =
Rbias
Vcc > 7.5 V
RFC (Optional)
4
C (DC Block)
C (DC Block)
3
IN MP4TD1100
1 Vd = 5.5 V
2
OUT
Typical Performance Curves @ Id = 60 mA, TA = +25°C (unless otherwise noted)
DEVICE CURRENT vs DEVICE VOLTAGE
120
100
80
60
40
20
0
0246
Vd, DEVICE VOLTAGE (V)
8
RETURN LOSS vs FREQUENCY
-6
-8
-10
-12
-14
-16
-18
-20
0.1
1
FREQUENCY (GHz)
IN P U T
OUTPUT
10
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POWER GAIN vs CURRENT
14
12
10
8
6
4
2
0
20
40 60
Id, DEVICE CURRENT (mA)
0 .1 G H z
0.5 GH z
1 .0 G H z
2 .0 G H z
80
100
POUT @ 1dB GAIN COMPRESSION
vs FREQUENCY
23
21 Id=75mA
19
Id=60m A
17
15
Id=40mA
13
11
0. 1
1
FR EQ U EN C Y (G H z)
10
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
PH (408) 432-1480 FX (408) 432-3440
2


Part Number MP4TD1100
Description Silicon Bipolar MMIC Cascadable Amplifier
Maker M-pulse Microwave
Total Page 3 Pages
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