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APT20SCD120B Datasheet

Zero Recovery Silicon Carbide Schottky Diode

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APT20SCD120B pdf
APT20SCD120B
APT20SCD120S
1200V 20A
Zero Recovery Silicon Carbide Schottky Diode
PRODUCT APPLICATIONS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Power Factor Correction (PFC)
PRODUCT FEATURES
• Zero Recovery Times (trr)
• Popular TO-247 Package or
surface mount D3PAK package
• Low Forward Voltage
• Low Leakage Current
PRODUCT BENEFITS
• Higher Reliability Systems
• Minimizes or eliminates
snubber
T O -247
D3PAK
1
2
12
1 - Cathode
2 - Anode
Back of Case - Cathode
MAXIMUM RATINGS
TC = 25°C unless otherwise specied.
Symbol Characteristic / Test Conditions
Ratings
Unit
VR
VRRM
VRWM
IF
IFRM
IFSM
Ptot
TJ, TSTG
TL
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum D.C. Forward current
TC = 25°C
TC = 135°C
Repetitive Peak Forward Suge Current (TJ = 45°C, tp = 10ms, Half Sine Wave)
Non-Repetitive Forward Surge Current (TJ = 25°C, tp = 10ms, Half Sine)
Power Dissipation
TC = 25°C
TC = 110°C
Operating and Storage Junction Temperature Range
Lead Temperature for 10 Seconds
1200
68
20
100
220
208
66
-55 to 150
300
Volts
Amps
W
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
VF Forward Voltage
IF = 20A TJ = 25°C
IF = 20A, TJ = 150°C
IRM Maximum Reverse Leakage Current
VR = 1200V TJ = 25°C
VR = 1200V, TJ = 150°C
Qc Total Capactive Charge VR = 800V, IF = 20A, di/dt = -100A/μs, TJ = 25°C
Junction Capacitance VR = 0V, TJ = 25°C, f = 1MHz
CT Junction Capacitance VR = 200V, TJ = 25°C, f = 1MHz
Junction Capacitance VR = 400V, TJ = 25°C, f = 1MHz
Min Typ Max Unit
1.5 1.8
Volts
2.2
400
2000
μA
66 nC
1135
160 pF
100
Microsemi Website - http://www.microsemi.com
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  Microsemi Electronic Components Datasheet  

APT20SCD120B Datasheet

Zero Recovery Silicon Carbide Schottky Diode

No Preview Available !

APT20SCD120B pdf
THERMAL AND MECHANICAL CHARACTERISTICS
APT20SCD120B_S
Symbol Characteristic / Test Conditions
Min Typ Max Unit
RθJC
WT
Junction-to-Case Thermal Resistance
Package Weight
Torque Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the specications and information contained herein.
0.22
5.9
10
1.1
0.6 °C/W
oz
g
lb·in
N·m
TYPICAL PERFORMANCE CURVES
0.70
0.60
0.50
0.40
0.30
Note :
0.20
t1
t2
0.10
Duty Factor D = t1/t2
Peak T J = P DM x Z θJC + T C
0
10-5
10-4
10-3
10-2
0.1
1
10 100
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
80
TJ = -55°C
70
60
T1J = 25°C
50
TJ = 150°C
40
TJ = 125°C
30
20
10
0
0 12 34 56 7
VF, ANODE-TO-CATHODE VOLTAGE (V)
FIGURE 2, Forward Current vs. Forward Voltage
70
60
50
40
30
20
10
0
25
50 75 100 125
Case Temperature (°C)
150
FIGURE 3, Maximum Forward Current vs. Case Temperature


Part Number APT20SCD120B
Description Zero Recovery Silicon Carbide Schottky Diode
Maker MICROSEMI
Total Page 4 Pages
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APT20SCD120B pdf
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