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MOS-TECH
MOS-TECH

MT1803 Datasheet Preview

MT1803 Datasheet

N-Channel Power MOSFET

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MT1803 pdf
MOS-TECH Semiconductor Co.,LTD
茂鈿半導體股份有限公司
N-Channel Enhancement Mode Field Effect Transistor
MT1803
Features
VDS=30V
ID=60A(Tc=25 , VGS=10V)
RDS(ON) 6.5mΩ @VGS=10V
RDS(ON) 10mΩ @VGS=4.5V
High Density Cell Design for Ultra Low
On-Resistance.
Lead free product is acquired.
Applications
Switching Applications.
Absolute Maximum Ratings (TA = 25 unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Maximum Power Dissipation 1
Operating Junction and Storage Temperature Range
Tc=25
Tc=25
Thermal Resistance Ratings
Symbol
Parameter
RthJA
Maximum Junction-to-Ambient
Notes:
1. Surface Mounted on 1” x 1” FR4 Board, t 10 Sec.
Rev1.0 Jan-30-2013
Ratings
30
20
60
160
40
50
-55 to 150
Units
V
V
A
A
A
W
Ratings
52
Unit
/W
www.mtsemi.com
Page 1 of 8



MOS-TECH
MOS-TECH

MT1803 Datasheet Preview

MT1803 Datasheet

N-Channel Power MOSFET

No Preview Available !

MT1803 pdf
MOS-TECH Semiconductor Co.,LTD
茂鈿半導體股份有限公司
2. Pulse width limited by maximum junction temperature.
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Parameter
Test Condition
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS= 0V, IDS= 250µA
VGS(th) Gate Threshold Voltage
VDS= VGS, ID= 250µA
IGSS Gate-Body Leakage Current
VDS= 0V, VGS= ±20V
IDSS Zero Gate Voltage Drain Current
VDS= 24V, VGS= 0V
VDS= 24V, VGS= 0V, TJ= 85
RDS(on) Drain Source On State Resistance a
VSD Diode Forward Voltage a
Dynamic Characteristics b
VGS= 10V, ID= 25A
VGS= 4.5V, ID= 20A
IS= 25A, VGS= 0V
Ciss Input Capacitance
Coss Output Capacitance
VDS= 15V, VGS= 0V, f= 1MHz
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS= 15V, VGS= 10V, ID= 25A
Qgd Gate-Drain Charge
td(on)
Turn-On Delay Time
tr Rise Time
VDS= 15V, VGS= 10V
Td(off)
Turn-Off Delay Time
ID= 20A, RG= 4.7Ω
tf Fall Time
Rg Gate Resistance
VDS= 0V, VGS= 0V, f= 1MHz
trr Source-Drain Reverse Recovery Time IS= 25A, di/dt= 100A/µs
Note:
≦ ≦a. Pulse test; pulse width 300µs, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
MT1803
Min Typ Max Unit
30 -
-V
1.0 1.6 2.0 V
- - ±100 nA
- -1
µA
- - 30
- 5 6.5
mΩ
- 7.5 10
- 0.7 1.3 V
- 2200 -
- 390 - pF
- 255 -
- 37 -
- 9 - nC
-5-
- 10 -
- 128 -
nSec
- 44 -
- 31 -
- 1.9 - Ω
- 32 - nSec
Rev1.0 Jan-30-2013
www.mtsemi.com
Page 2 of 8


Part Number MT1803
Description N-Channel Power MOSFET
Maker MOS-TECH
Total Page 8 Pages
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