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MOS-TECH
MOS-TECH

MT3040 Datasheet Preview

MT3040 Datasheet

N-Channel Power MOSFET

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MT3040 pdf
MOS-TECH Semiconductor Co.,LTD
N
MT3040
N-Channel Low Qg® MOSFET
45V, 100A, 4.5m
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall ef ficiency of DC/ DC converters using
either synchronous or conven tional swit ching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
Applications
• DC/DC converters.UPS.Inverter
Features
• rDS(ON) = 4.5m, VGS = 10V, ID = 10A
• rDS(ON) = 6.0m, VGS = 4.5V, ID = 10A
• High performance t rench t echnology for ext remely low
rDS(ON)
• Low gate charge
• High power and current handling capability
(FLANGE)
DRAIN
SOURCE
DRAIN
GATE
G
TO-220
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V) (Note 1)
Continuous (TC = 25oC, VGS = 4.5V) (Note 1)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W)
Pulsed
EAS Single Pulse Avalanche Energy (Note 2)
PD
Power dissipation
Derate above 25oC
TJ, TSTG
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case TO-220
Thermal Resistance Junction to Ambient TO-220 ( Note 3)
Package Marking and Ordering Information
Device Marking
MT3040
Device
MT3040
Package
TO-220
Reel Size
Tube
D
S
Ratings
45
±20
100
85
15
Figure 4
105
110
0.73
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
1.42
64
oC/W
oC/W
Tape Width
N/A
Quantity
50 units
©2010 MOS-TECH Semiconductor Corporation
MT3040 Rev. A



MOS-TECH
MOS-TECH

MT3040 Datasheet Preview

MT3040 Datasheet

N-Channel Power MOSFET

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MT3040 pdf
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 24V
VGS = 0V
TC = 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 10A, VGS = 10V
ID = 10A, VGS = 4.5V
ID
TJ
=
=
1107A5,oCVGS
=
10V,
Dynamic Characteristics
CISS
COSS
CRSS
RG
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 15V, VGS = 0V,
f = 1MHz
VGS = 0.5V, f = 1MHz
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 15V
ID = 40A
Ig = 1.0mA
Switching Characteristics (VGS = 10V)
tON
td(ON)
Turn-On T ime
Turn-On Delay Time
tr Rise Time
td(OFF)
Turn-Off Delay Time
tf Fall Time
tOFF
Turn-Off Time
VDD = 15V, ID = 40A
VGS = 4.5V, RGS = 4.7
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
Notes:
1: Package current limitation is 80A.
2: Starting TJ = 25°C, L = 51uH, IAS = 64A, VDD = 37V, VGS = 10V.
3: Pulse width = 100s.
4
ISD = 40A
ISD = 20A
ISD = 40A, dISD/dt = 100A/µs
ISD = 40A, dISD/dt = 100A/µs
Min Typ Max Units
45 -
-V
-
-
-
-
1
250
µA
- - ±100 nA
1.4 1.6 2.0
V
- 0.0045 0.0048
- 0.006 0.007
- 0.009 0.01
- 2013 -
pF
- 452 -
pF
- 184 -
pF
- 1.9 -
- 56 72 nC
- 35 39 nC
- 3.4 4.7 nC
- 9.7 - nC
- 6.5 - nC
- 11 - nC
- - 202 ns
- 12
ns
- 120 -
ns
- 42 -
ns
- 30 -
ns
- - 112 ns
- - 1.25 V
- - 1.0 V
- - 32 ns
- - 18 nC
©2010 MOS-TECH Semiconductor Corporation
MT3040 Rev. A


Part Number MT3040
Description N-Channel Power MOSFET
Maker MOS-TECH
Total Page 9 Pages
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