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MOS-TECH
MOS-TECH

MT3116 Datasheet Preview

MT3116 Datasheet

N-Channel Powe MOSFET

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MT3116 pdf
MOS-TECH Semiconductor Co.,LTD
MT3116
N-Channel Power MOSFET
100V, 176A, 3.5mΩ
Features
• Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extr emely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
General Description
This N-Channel MOSFET is produced using MOS-TECH
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Applications
• DC-DC primary bridge
• DC-DC Synchronous rectification
• Hot swap
D
G DS
TO-220
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Curren
- Continuous (Silicon Limited)
- Continuous( Package Limited)
- Continuous
- Pulsed
TC = 25oC
TC = 25oC
TC = 25oC(Note 1a)
EAS
PD
TJ, TSTG
Single Pulsed Avalanche Energy
Power Dissipation
- TC = 25oC
- TA = 25oC
Operating and Storage Temperature Range
(Note 3)
(Note 1a)
(Note 1b)
S
Ratings
100
±20
176
120
75
704
1500
380
2.4
-55 to +175
Units
V
V
A
A
mJ
W
W/oC
oC
Thermal Characteristics
Symbol
Parameter
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
MT3116
Device
MT3116
Package
TO-220
(Note 1)
(Note 1a)
Ratings
0.5
62.5
Reel Size
-
Tape Width
-
Units
oC/W
Quantity
50
©2012 MOS-TECH Semiconductor Corporation
1
www.mtsemi.com



MOS-TECH
MOS-TECH

MT3116 Datasheet Preview

MT3116 Datasheet

N-Channel Powe MOSFET

No Preview Available !

MT3116 pdf
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
ID = 250μA, VGS = 0V, TC = 25oC
ID = 250μA, Referenced to 25oC
VDS = 80V, VGS = 0V
VGS = ±20V, VDS = 0V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250μA
VGS = 10V, ID = 75A
VDS = 10V, ID = 75A
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 80V, ID = 75A
VGS = 10V
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 50V, ID = 75A
VGS = 10V, RGEN = 4.7Ω
Drain-Source Diode Characteristics
VSD Drain to Source Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 75A (Note 2)
VGS = 0V, ISD = 75A, VDD = 80V
dIF/dt = 100A/μs
Min. Typ. Max. Units
100 -
- 0.07
-V
- V/oC
- - 1 μA
- - ±100 nA
2.0 - 4.0 V
- 3.5 4.5 mΩ
- 167 - S
- 5485 8295 pF
- 780 830 pF
- 210 - pF
- 89 116 nC
- 24 - nC
- 8 - nC
- 25 - nC
- 22 54 ns
- 54 118 ns
- 37 84 ns
- 11 32 ns
- - 1.25 V
- 72 - ns
- 129 - nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 40 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 62.5 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. Starting TJ = 25 °C, L = 1 mH, IAS = 36.3 A, VDD = 100 V, VGS = 10 V.
MT3116 Rev. A
2 www.mtsemi.com


Part Number MT3116
Description N-Channel Powe MOSFET
Maker MOS-TECH
Total Page 7 Pages
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