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MOS-TECH
MOS-TECH

MT3202 Datasheet Preview

MT3202 Datasheet

N-Channel Power MOSFET

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MT3202 pdf
MOS-TECH Semiconductor Co.,LTD
MT3202
60V N-Channel MOSFET
Features
• 65A, 60V, RDS(on) = 0.016@VGS = 10 V
• Low gate charge ( typical 167nC)
• Low Crss ( typical 43pF)
• Fast switching
• Improved dv/dt capability

Description
These N-Channel enhancement mode power field effect
transistors are produced using Mos-tech’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction,car audio,electronic lamp ballast based on half bridge
topology.
D
GDS
TO-220
G
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
S
MT3202
60
65
40
240
± 20
400
65
12.5
4.6
137
1.09
-55 to +150
300
MT3202
0.96
65.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
©2011 MOS-TECH Semiconductor Corporation
MT3202 Rev. A1
1
www.mtsemi.com



MOS-TECH
MOS-TECH

MT3202 Datasheet Preview

MT3202 Datasheet

N-Channel Power MOSFET

No Preview Available !

MT3202 pdf
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
MT3202
MT3202
TO-220
--
Tape Width
--
Quantity
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
BVDSS/
TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 60 V, VGS = 0 V
VDS = 48 V, TC = 125°C
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 32.5 A
VDS = 40 V, ID = 32.5 A
(Note 4)
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 30 V, ID = 65A,
RG = 25
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
(Note 4, 5)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 48 V, ID = 65A,
VGS = 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 65 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 65 A,
dIF / dt = 100 A/µs
(Note 4)
60
--
--
--
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 47µH, IAS =65A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 65A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Typ
--
0.5
--
--
--
--
--
0.016
35
1790
482
43
26
96
99
55
33
10
11
--
--
--
62
132
Max Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
4.0
0.019
--
V
S
2190
625
55
pF
pF
pF
59 ns
208 ns
214 ns
117 ns
43 nC
-- nC
-- nC
65 A
240 A
1.4 V
-- ns
-- nC
MT3202 Rev. A1
2 www.mtsemi.com


Part Number MT3202
Description N-Channel Power MOSFET
Maker MOS-TECH
Total Page 7 Pages
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