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MT3207 Datasheet Preview

MT3207 Datasheet

N-Channel Power MOSFET

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MT3207 pdf
MOS-TECH Semiconductor Co.,LTD
MT3207
N-Channel MOSFET
60V, 70A, 9m
Features
• RDS(on) = 8.5m( Typ.)@ VGS = 10V, ID = 40A
• Low gate charge(Typ. 57nC)
• Low Crss(Typ. 145pF)
• Fast switching
• Improved dv/dt capability
• RoHS compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Mos-tech’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies,active power factor
correction, electronic lamp ballast based on half bridge topology.
D
G DS
TO-220
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
Ratings
60
±20
70
65
320
480
80
17.6
4.5
176
1.17
-55 to +175
300
Ratings
0.85
62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2010 MOS-TECH Semiconductor Corporation
MT3207 Rev. A
1
www.mtsemi.com



MOS-TECH
MOS-TECH

MT3207 Datasheet Preview

MT3207 Datasheet

N-Channel Power MOSFET

No Preview Available !

MT3207 pdf
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
MT3207
Device
MT3207
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250µA, VGS = 0V, TJ = 25oC
ID = 250µA, Referenced to 25oC
VDS = 60V, VGS = 0V
VDS = 48V, TC = 150oC
VGS = ±20V, VDS = 0V
60
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 40A
VDS = 25V, ID = 40A
(Note 4)
2.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V
f = 1MHz
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(tot)
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 30V, ID = 70A
RG = 25
VDS = 48V, ID = 70A
VGS = 10V
(Note 4, 5)
(Note 4, 5)
-
-
-
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 70A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 70A
dIF/dt = 100A/µs
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.15mH, IAS = 80A, VDD = 50V, RG = 25, Starting TJ = 25°C
3: ISD 80A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width 300µs, Duty Cycle 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
(Note 4)
-
-
-
-
-
Typ.
-
0.075
-
-
-
--
8.5
67
2450
910
145
32
259
136
113
57
15
24
-
-
-
64
127
Max. Units
-
-
1
10
±100
V
V/oC
µA
nA
4.0 V
9 m
-S
3190
1190
190
pF
pF
pF
75 ns
528 ns
282 ns
236 ns
74 nC
- nC
- nC
70 A
220 A
1.4 V
- ns
- nC
MT3207 Rev. A
2 www.mtsemi.com


Part Number MT3207
Description N-Channel Power MOSFET
Maker MOS-TECH
Total Page 7 Pages
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