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MOS-TECH
MOS-TECH

MT3258B Datasheet Preview

MT3258B Datasheet

N-Channel Power MOSFET

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MT3258B pdf
MT3258/B
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‡ Max RDS(on)=5m: at VGS =10V,ID =85A
‡ Fast Switching Speed
‡ Low Gate Charge
‡100% avalanche tested
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G
DS
G

D
S
TO-252
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
 
TC=25°C
Rating
Unit
80
±25
175
-55 to 175
170
V
°C
°C
A
ZZZPWVHPLFRP



MOS-TECH
MOS-TECH

MT3258B Datasheet Preview

MT3258B Datasheet

N-Channel Power MOSFET

No Preview Available !

MT3258B pdf
Mounted on Large Heat Sink
IDM Pulsed Drain Current *
ID Continuous Drain Current
PD Maximum Power Dissipation
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Avalanche Ratings
EAS Avalanche Energy, Single Pulsed
L=0.5mH
Note * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=64V
660**
170
114
288
144
0.52
62.5
1168***
Electrical Characteristics (TC = 25°C Unless Otherwise Noted)
MT3258/B
A
A
W
°C/W
mJ
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON)* Drain-Source On-state Resistance
Diode Characteristics
VGS=0V, IDS=250μA
VDS=80V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250μA
VGS=±25V, VDS=0V
VGS=10V, IDS=85 A
80
-
-
2.0
-
-
VSD*
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=85 A, VGS=0V
ISD=85 A, dlSD/dt=100A/μs
-
-
-
Typ.
-
-
-
3.0
-
3.8
0.8
30
52
Max.
-
1
10
4.0
±100
5.0
1.2
-
-
Unit
V
μA
V
nA
mΩ
V
ns
nC
2 ZZZPWVHPLFRP


Part Number MT3258B
Description N-Channel Power MOSFET
Maker MOS-TECH
Total Page 11 Pages
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