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MOS-TECH
MOS-TECH

MT3275 Datasheet Preview

MT3275 Datasheet

N-Channel Power MOSFET

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MT3275 pdf
MOS-TECH Semiconductor Co.,LTD
MT3275
N-Channel Power MOSFET
75V, 200A, 3m
Features
• RDS(on) = 3m( Typ.)@ VGS = 10V, ID = 75A
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(on)
• High power and current handling capability
• RoHS compliant
Description
This N-Channel MOSFET is produced using mos-tech Semicon-
ductor’s adcanced Power Trench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
D
GDS
TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-
-
Continuous
Continuous
(TC
(TC
=
=
25oC,
100oC,
Silicon
Silicon
Limited)
Limited)
- Continuous (TC = 25oC, Package Limited)
Drain Current
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 3)
MT3275
75
±20
200*
135*
100
730
1900
5.5
450
2.5
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
Ratings
0.4
0.5
62.5
©2012 MOS-TECH Semiconductor Corporation
1
Units
V
V
A
A
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
www.mtsemi.com



MOS-TECH
MOS-TECH

MT3275 Datasheet Preview

MT3275 Datasheet

N-Channel Power MOSFET

No Preview Available !

MT3275 pdf
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
MT3275
Device
MT3275
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics
Symbol
Parameter
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
Test Conditions
Min.
ID = 250µA, VGS = 0V, TC = 25oC
ID = 250µA, Referenced to 25oC
VDS = 75V, VGS = 0V
VDS = 75V, TC = 150oC
VGS = ±20V, VDS = 0V
75
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 75A
VDS = 10V, ID = 75A
(Note 4)
2.5
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Qgd Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 60V, ID = 75A
VGS = 10V
(Note 4, 5)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 37.5V, ID = 75A
RGEN = 25Ω, VGS = 10V
(Note 4, 5)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 75A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 75A
dIF/dt = 100A/µs
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.71mH, IAS = 75A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 75A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300µs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
(Note 4)
-
-
-
-
-
Typ.
-
0.05
-
-
-
3.5
3.0
180
8600
780
300
160
35
40
25
40
85
45
-
-
-
53
77
Max. Units
-
-
1
500
±100
V
V/oC
µA
nA
4.5 V
4.0 m
-S
- pF
- pF
- pF
220 nC
- nC
- nC
- ns
- ns
- ns
- ns
190 A
730 A
1.3 V
- ns
- nC
MT3275 Rev. A
2 www.mtsemi.com


Part Number MT3275
Description N-Channel Power MOSFET
Maker MOS-TECH
Total Page 7 Pages
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