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MOS-TECH
MOS-TECH

MT3407 Datasheet Preview

MT3407 Datasheet

P-Channel Power MOSFET

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MT3407 pdf
MOS-TECH Semiconductor Co.,LTD
茂鈿半導體股份有限公司
P-Channel Enhancement Mode Field Effect Transistor
MT3407
Product Summary
VDS= -30V
ID= -4.1A (VGS= -10V)
≦ ΩRDS(ON) 60m @VGS= -10V
≦ ΩRDS(ON) 95m @VGS= -4.5V
Applications
▪ Power Management in Notebook Computer
▪ Portable Equipment and Battery Powered Systems.
Features
Advanced Trench Process Technology.
High Density Cell Design for Ultra Low
On-Resistance.
Lead free product is acquired.
RoHS Compliant.
Absolute Maximum Ratings (TA = 25 unless otherwise noted)
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID
IDM
IS
PD
TJ, TSTG
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Maximum Power Dissipation 1
Operating Junction and Storage Temperature Range
Notes:
1. Surface Mounted on 1” x 1” FR4 Board, t 10 Sec.
2. Pulse width limited by maximum junction temperature.
Rev2.0 May-2-2013
Steady State
-30
±20
-4.1
-20
-2
1.25
-55~150
Units
V
V
A
A
A
W
www.mtsemi.com
Page 1 of 6



MOS-TECH
MOS-TECH

MT3407 Datasheet Preview

MT3407 Datasheet

P-Channel Power MOSFET

No Preview Available !

MT3407 pdf
MOS-TECH Semiconductor Co.,LTD
茂鈿半導體股份有限公司
MT3407
Thermal Resistance Ratings
Symbol
Parameter
RthJA
Maximum Junction-to-Ambient
RthJF
Maximum Junction-to-Foot (Drain)
t 10 Sec
Steady State
Steady State
Typical
65
85
43
Maximum
90
125
60
Unit
/W
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Parameter
Test Condition
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS= 0V, ID= -250µA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = -250µA
IGSS Gate-Body Leakage Current
VDS = 0V, VGS = ±20V
IDSS Zero Gate Voltage Drain Current
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 85
RDS(on) Drain Source On State Resistance a
gfs Forward Transconductance a
VSD Diode Forward Voltage a
Dynamic Characteristics b
VGS = -10V, ID = -4.1A
VGS = -4.5V, ID = -3A
VDS = -5V, ID = -4A
VGS = 0V, IS = -1A
Ciss Input Capacitance
Coss Output Capacitance
VDS= -15V, VGS=0V, f=1MHz
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = -15V, VGS = -4.5V, ID = -2.5A
Qgd Gate-Drain Charge
td(on)
Turn-On Delay Time
tr Rise Time
VDD = -15V, RL = 15Ω
Td(off)
Turn-Off Delay Time
ID= -1.0A, VGEN = -10V, RG = 6Ω
tf Fall Time
Rg Gate Resistance
VGS=0, VDS=0, f=1MHz
trr Body Diode Reverse Recovery Time
IF = -4A, di/dt = 100A/µs
Qrr Body Diode Reverse Recovery Charge
Note:
≦ ≦a. Pulse test; pulse width 300µs, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
-30 -
-V
-1 -1.5 -2
V
- - ±100 nA
- - -1
µA
- - -30
- 53 60
mΩ
- 80 95
5.5 8.2 - S
-
-0.8 -1.3
V
- 625 -
- 100 - pF
- 60 -
- 11.6 16
- 1.3 - nC
- 2.5 -
- 6 12
- 12 23
nSec
- 25 46
- 6 12
- 8 -Ω
- 14 - nSec
- 5 - nC
Rev2.0 May-2-2013
www.mtsemi.com
Page 2 of 6


Part Number MT3407
Description P-Channel Power MOSFET
Maker MOS-TECH
Total Page 6 Pages
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