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Macronix International
Macronix International

MX29L3211 Datasheet Preview

MX29L3211 Datasheet

CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM

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MX29L3211 pdf
ADVANCED INFORMATION
MX29L3211
32M-BIT [4M x 8/2M x 16] CMOS
SINGLE VOLTAGE PAGEMODE FLASH EEPROM
FEATURES
• 3.3V ± 10% write, erase and read
• Endurance: 10,000 cycles
• Fast random access time: 100ns/120ns
• Fast pagemode access time: 50ns
www.DataSheet4UP.caogme access depth: 16 bytes/8 words
• Sector erase architecture
- 32 equal sectors of 64K word each
- Sector erase time: 200ms typical
• Auto Erase and Auto Program Algorithms
- Automatically erases any one of the sectors or the
whole chip with Erase Suspend capability
- Automatically programs and verifies data at specified
addresses
• Status Register feature for detection of program or
erase cycle completion
• Low VCC write inhibit is equal to or less than 1.8V
• Software data protection
• Page program operation
- Internal address and data latches for 256 bytes/128
words per page
- Page programming time: 5ms typical
• Low power dissipation
- 50mA active current
- 20uA standby current
• Two independently Protected sectors
• Industry standard surface mount packaging
- 44 pin SOP (500mil)
- 48 TSOP(I)
GENERAL DESCRIPTION
The MX29L3211 is a 32-mega bit pagemode Flash
memory organized as either 4M word x 8 or 2M byte x 16.
The MX29L3211 includes 32 sectors of 64K words.
MXIC's Flash memories offer the most cost-effective
and reliable read/write non-volatile random access
memory and fast page mode access. The MX29L3211
is packaged 44-pin SOP and 48-pin TSOP. It is designed
to be reprogrammed and erased in-system or in-standard
EPROM programmers.
The standard MX29L3211 offers access times as fast as
100ns,allowing operation of high-speed microprocessors
without wait. To eliminate bus contention, the MX29L3211
has separate chip enable CE, output enable (OE), and
write enable (WE) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29L3211 uses a command register to manage this
functionality.
To allow for simple in-system reprogrammability, the
MX29L3211 does not require high input voltages for
programming. Three-volt-only commands determine
the operation of the device. Reading data out of the
device is similar to reading from an EPROM.
MXIC Flash technology reliably stores memory contents
even after 10,000 cycles. The MXIC's cell is designed
to optimize the erase and programming mechanisms. In
addition, the combination of advanced tunnel oxide
processing and low internal electric fields for erase and
programming operations produces reliable cycling. The
MX29L3211 uses a 3.3V ± 10% VCC supply to perform
the Auto Erase and Auto Program algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up
protection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC +1V.
P/N:PM0641
REV. 0.3, NOV. 06, 2001
1



Macronix International
Macronix International

MX29L3211 Datasheet Preview

MX29L3211 Datasheet

CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM

No Preview Available !

MX29L3211 pdf
PIN CONFIGURATIONS
44 SOP(500mil)
www.DataSheet4U.com
WE
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
GND
OE
Q0
Q8
Q1
Q9
Q2
Q10
Q3
Q11
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44 A20
43 A19
42 A8
41 A9
40 A10
39 A11
38 A12
37 A13
36 A14
35 A15
34 A16
33 BYTE
32 GND
31 Q15/A-1
30 Q7
29 Q14
28 Q6
27 Q13
26 Q5
25 Q12
24 Q4
23 VCC
MX29L3211
PIN DESCRIPTION
SYMBOL
A0 - A20
Q0 - Q14
Q15/A-1
CE
OE
WE
BYTE
VCC
GND
PIN NAME
Address Inputs
Data Input/Output
Q15(Word mode)/LSB Address (Byte
mode)
Chip Enable Input
Output Enable Input
Write Enable Input
BYTE/Word Mode Selection
Power Supply
Ground Pin
48 TSOP (Normal Type)
BYTE
A16
A15
A14
A13
A12
A11
A10
A9
A8
A19
GND
A20
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
MX29L3211
(Normal Type)
48 GND
47 GND
46 Q15/A-1
45 Q7
44 Q14
43 Q6
42 Q13
41 Q5
40 Q12
39 Q4
38 VCC
37 VCC
36 WE
35 Q11
34 Q3
33 Q10
32 Q2
31 Q9
30 Q1
29 Q8
28 Q0
27 OE
26 GND
25 GND
P/N:PM0641
REV. 0.3, NOV. 06, 2001
2


Part Number MX29L3211
Description CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
Maker Macronix International
Total Page 30 Pages
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MX29L3211 pdf
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