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MDA0336E Datasheet Preview

MDA0336E Datasheet

N-Channel MOSFET

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MDA0336E pdf
MDA0336E
Common-Drain N-Channel Trench MOSFET 30V, 9A, 9.5m
General Description
The MDA0336E uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality.
Features
- VDS = 20 V
- ID = 9 A
- Drain-Source ON Resistance;
RDS(ON) < 9.5mΩ @ VGS = 4.5V
RDS(ON) < 10@ VGS = 4.0V
RDS (ON) < 10.5mΩ @ VGS = 3.5V
RDS (ON) < 11.5mΩ @ VGS = 3.1V
- ESD Protection = HBM CLASS 2
Applications
- Portable Battery Protection Module
Absolute Maximum Ratings (Ta = 25oC unless otherwise noted) Note 1
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulse Drain Current
Power Dissipation for Single Operation
Junction and Storage Temperature Range
TA=25oC
TA=70oC
TA=25oC
TA=70oC
Symbol
VDSS
VGSS
ID
IDM
PDSM
TJ, Tstg
Rating
20
±12
9
7
65
1.7
1.0
-55~150
Units
V
V
A
A
A
W
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(Steady-State)
Thermal Resistance, Junction-to-Case
Dec 2014. Version 1.0
1
Symbol
RθJA
RθJC
Rating
75
6
Unit
oC/W
MagnaChip Semiconductor Ltd.



MagnaChip
MagnaChip

MDA0336E Datasheet Preview

MDA0336E Datasheet

N-Channel MOSFET

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MDA0336E pdf
Ordering Information
Part Number
MDA0336EURH
Temp. Range
-55~150oC
Package
2x5 DFN
Packing
Tape and Reel
RoHS Status
Halogen Free
Electrical Characteristics (Ta =25oC unless otherwise noted)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Symbol
BVDSS
VGS(th)
IDSS
IGSS
Drain-Source Resistance Note 2
RDS(ON)
Forward Trans conductance
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Gate resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
gfs
Qg
Qgs
Qgd
Ciss
Crss
Coss
Rg
td(on)
tr
td(off)
tf
VSD
trr
Qrr
Test Condition
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250 uA
VDS = 20V, VGS = 0V
VGS = ±10V, VDS = 0V
VGS = 4.5V, ID = 9A
VGS = 4.0V, ID = 9A
VGS = 3.5V, ID = 9A
VGS = 3.1V, ID = 9A
VDS = 5V, ID = 9A
VDS = 10V, ID = 9A, VGS = 4.5V
VDS = 10V, VGS = 0V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VGS = 4.5V, VDS = 10V,
RL = 1.0Ω, RGEN = 3Ω
IS = 1.0A, VGS = 0V
IF = 9A, di/dt = 200A/μs
Min Typ Max Units
20
0.60
-
1.10
-
1.60
V
-
-10.0
-
-
1 uA
10.0 μA
- 7.3 9.5
- 7.5 10
- 7.9 10.5
- 8.4 11.5
- 40 -
S
- 22 -
- 3.7 -
- 10 -
- 1330 -
- 449 -
- 475 -
- 0.2 -
- 1.0 -
- 0.15 -
- 0.3 -
- 2.0 -
nC
pF
us
- 0.65 1
- 30 -
- 25 -
V
ns
nC
Notes :
1. The device current rating is derived from its thermal resistance and from the number and diameter of bonding wires. The testing current at wafer level is set
only for ease of testing. Actual package current ratings can be much higher.
2. RDS(ON) is Single MOS.
Dec 2014. Version 1.0
2 MagnaChip Semiconductor Ltd.


Part Number MDA0336E
Description N-Channel MOSFET
Maker MagnaChip
Total Page 5 Pages
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