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MDCA0338E Datasheet Preview

MDCA0338E Datasheet

N-Channel MOSFET

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MDCA0338E pdf
MDCA0338E
Common-Drain N-Channel Trench MOSFET 24V, 10A, 11.6m
General Description
The MDCA0338E uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality.
Features
- VDS = 24 V
- ID =10 A
- Drain-Source ON Resistance;
RDS(ON) < 11.6mΩ @ VGS = 4.5V
RDS(ON) < 12.6mΩ @ VGS = 4.0V
RDS (ON) < 15.0mΩ @ VGS = 3.5V
RDS (ON) < 17.5mΩ @ VGS = 3.1V
Applications
- Portable Battery Protection Module
5(D)
6(D)
7(D)
8(D)
4(G2)
3(S2)
2(G1)
1(S1)
SOJ-8
Absolute Maximum Ratings (Ta = 25oC unless otherwise noted) Note 1
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current Note 1
Pulse Drain Current Note 2
Power Dissipation for Single Operation Note 1
Junction and Storage Temperature Range
TA=25oC
TA=70oC
TA=25oC
TA=70oC
Symbol
VDSS
VGSS
ID
IDM
PDSM
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(Steady-State)
Thermal Resistance, Junction-to-Case
Symbol
RθJA
RθJC
Rating
24
±12
10
8
60
1.7
1.0
-55~150
Units
V
V
A
A
A
W
oC
Rating
75
6
Unit
oC/W
May 2016. Version 1.0
1 MagnaChip Semiconductor Ltd.



MagnaChip
MagnaChip

MDCA0338E Datasheet Preview

MDCA0338E Datasheet

N-Channel MOSFET

No Preview Available !

MDCA0338E pdf
Ordering Information
Part Number
MDCA0338EURH
Temp. Range
-55~150oC
Package
SOJ-8L
Packing
Tape and Reel
RoHS Status
Halogen Free
Electrical Characteristics (Ta =25oC unless otherwise noted)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Symbol
BVDSS
VGS(th)
IDSS
IGSS
Drain-Source Resistance Note 3
RDS(ON)
Forward Trans conductance
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
gfs
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
VSD
Notes :
1. Surface mounted FR-4 board by JEDEC (jesd51-7)
2. t=10 μs, Duty cycle 1%
3. RDS(ON) is Single MOS.
Test Condition
ID = 500μA, VGS = 0V
VDS = VGS, ID = 1 mA
VDS = 20V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS = 4.5V, ID = 5A
VGS = 4.0V, ID = 5A
VGS = 3.1V, ID = 5A
VGS = 2.5V, ID = 5A
VDS = 5V, ID = 10A
VDS = 10V, ID = 10A, VGS = 4.5V
VDS = 12V, VGS = 0V, f = 1MHz
VGS = 4.5V, VDS = 10V,
ID = 5A, RGEN = 3Ω
I = 1.0A, V = 0V
S GS
Min
24
0.50
-
-
7.4
7.7
8.5
10.0
-
-
-
-
-
-
-
-
-
-
-
0.5
Typ
-
1.00
-
-
9.0
9.3
10.2
11.8
33
18
3.7
8.2
1440
340
790
50
200
1800
2500
0.65
Max
-
1.50
1.0
±1.0
11.6
12.6
15.0
17.5
-
-
-
-
-
-
-
-
-
-
-
0.9
Units
V
μA
μA
S
nC
pF
ns
V
May 2016. Version 1.0
2 MagnaChip Semiconductor Ltd.


Part Number MDCA0338E
Description N-Channel MOSFET
Maker MagnaChip
Total Page 6 Pages
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