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Magna Tec
Magna Tec

BUZ908P Datasheet Preview

BUZ908P Datasheet

(BUZ907P / BUZ908P) N CHANNEL POWER MOSFET

No Preview Available !

BUZ908P pdf
MAGNA
TEC
BUZ907P
BUZ908P
MECHANICAL DATA
Dimensions in mm
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
15.49 (0.610)
16.26 (0.640)
P–CHANNEL
POWER MOSFET
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
Pin 1 – Gate
www.DataSheet4U.com
POWER MOSFETS FOR
AUDIO APPLICATIONS
3.55 (0.140)
3.81 (0.150)
1
1.01 (0.040)
1.40 (0.055)
TO-247
Pin 2 – Source
Case– Source
23
1.65 (0.065)
2.13 (0.084)
2.87 (0.113)
3.12 (0.123)
5.25 (0.215)
BSC
Pin 3 – Drain
FEATURES
• HIGH SPEED SWITCHING
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (220V & 250V)
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODES
• COMPLIMENTARY N–CHANNEL
BUZ902P & BUZ903P
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated)
VDSX
Drain – Source Voltage
VGSS
Gate – Source Voltage
ID Continuous Drain Current
ID(PK)
Body Drain Diode
PD
Total Power Dissipation
@ Tcase = 25°C
Tstg Storage Temperature Range
Tj Maximum Operating Junction Temperature
RθJC
Thermal Resistance Junction – Case
BUZ907P
-220V
BUZ908P
-250V
±14V
-8A
-8A
125W
–55 to 150°C
150°C
1°C/W
Magnatec. Telephone (01455) 554711. Fax (01455) 558843
Prelim. 01/97



Magna Tec
Magna Tec

BUZ908P Datasheet Preview

BUZ908P Datasheet

(BUZ907P / BUZ908P) N CHANNEL POWER MOSFET

No Preview Available !

BUZ908P pdf
MAGNA
TEC
BUZ907P
BUZ908P
STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Characteristic
Test Conditions
BVDSX
Drain – Source Breakdown Voltage VGS = 10V
BUZ907P
ID = -10mA
BUZ908P
BVGSS Gate – Source Breakdown Voltage VDS = 0
IG = ±100µA
VGS(OFF)
VDS(SAT)*
RDS(on)*
Gate – Source Cut–Off Voltage
Drain – Source Saturation Voltage
Static – Source Resistance
VDS = -10V
VGD = 0
VGS = -10
ID = -100mA
ID = -8A
ID = -8A
VDS = -220V
IDSX
Drain – Source Cut–Off Current VGS = 10V
BUZ907P
VDS = -250V
BUZ908P
yfs*
Forward Transfer Admittance
VDS = -10V
ID = -3A
Min.
-220
-250
±14
-0.15
Typ.
Max.
-1.5
-12
1.5
-10
Unit
V
V
V
V
V
mA
-10 mA
0.7 2 S
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Characteristic
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
ton Turn–on Time
toffwww.DataShTeuert4nU-o.cfof mTime
Test Conditions
VDS = -10V
f = 1MHz
VDS = -20V
ID = -5A
* Pulse Test: Pulse Width = 300µs , Duty Cycle 2%.
Min.
Typ.
TBA
TBA
TBA
TBA
TBA
Max. Unit
pF
ns
D
G
S
Magnatec. Telephone (01455) 554711. Fax (01455) 558843
Prelim. 01/97


Part Number BUZ908P
Description (BUZ907P / BUZ908P) N CHANNEL POWER MOSFET
Maker Magna Tec
Total Page 2 Pages
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BUZ908P pdf
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