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ME06N10 Datasheet Preview

ME06N10 Datasheet

N-Channel 100-V (D-S) MOSFET

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ME06N10 pdf
N-Channel 100-V (D-S) MOSFET
ME06N10/ME06N10-G
GENERAL DESCRIPTION
The ME25N06 is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching, and low in-line power loss are needed in a
very small outline surface mount package.
FEATURES
RDS(ON)200mΩ@VGS=10V
RDS(ON)260mΩ@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
DC/DC Converter
Load Switch
LCD Display inverter
PIN CONFIGURATION
(TO-252-3L)
Top View
Ordering Information: ME06N10 (Pb-free)
ME06N10-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25Unless Otherwise Noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Continuous Drain Current
TC=25
TC=70
ID
Pulsed Drain Current
IDM
Maximum Power Dissipation
TC=25
TC=70
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Thermal Resistance-Junction to Case*
* The device mounted on 1in2 FR4 board with 2 oz copper
RθJC
Maximum Ratings
100
±20
7.2
5.7
28.8
16.6
10.6
-55 to 150
7.5
Unit
V
V
A
A
W
℃/W
Dec, 2013 Ver1.0
01



Matsuki
Matsuki

ME06N10 Datasheet Preview

ME06N10 Datasheet

N-Channel 100-V (D-S) MOSFET

No Preview Available !

ME06N10 pdf
ME06N10/ME06N10-G
N-Channel 100-V (D-S) MOSFET
Electrical Characteristics (TC =25Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max Unit
STATIC
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON)
VSD
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance a
Diode Forward Voltage
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±20V
VDS=100V, VGS=0V
VGS=10V, ID= 3A
VGS=4.5V, ID=1A
IS=6.5A, VGS=0V
100 V
1 3V
±100 nA
1 μA
160 200
mΩ
200 260
0.9 1.3
V
DYNAMIC
Qg Total Gate Charge
8.2
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=50V, VGS=5V, ID=6.5A
4.3 nC
5.3
Rg Gate Resistance
Ciss Input Capacitance
VDS=0V, VGS=0V, f=1MHz
1.1 Ω
396
Coss
Output Capacitance
VDS=25V, VGS=0V, f=1MHz
47
Crss Reverse Transfer Capacitance
30
td(on)
Turn-On Delay Time
9.6
tr
td(off)
Turn-On Rise Time
Turn-Off Delay Time
VDD=50V, RL =50Ω
VGEN=10V, RG=2.5Ω
4.2
25
tf Turn-Off Fall Time
3.2
Notes: a, pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
pF
ns
Dec, 2013 Ver1.0
02


Part Number ME06N10
Description N-Channel 100-V (D-S) MOSFET
Maker Matsuki
Total Page 5 Pages
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1 ME06N10 N-Channel 100-V (D-S) MOSFET Matsuki
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2 ME06N10-G N-Channel 100-V (D-S) MOSFET Matsuki
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