| Description | The ME4936 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where ... |
| Features |
RDS(ON) 36mΩ@VGS=10V RDS(ON) 45mΩ@VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability
APPLICATIONS
Power Management DC/DC Converter LCD TV & Monitor Display inverter CCFL inverter
e Ordering Information: ME4936(Pb-free)
ME4936-G (Green product-Halogen free)
Absolute Maximum...
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| Datasheet |
 ME4936 Datasheet - 708.18KB |
