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Matsuki
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ME70N03A Datasheet Preview

ME70N03A Datasheet

25V N-Channel Enhancement Mode MOSFET

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ME70N03A pdf
25V N-Channel Enhancement Mode MOSFET
VDS=25V
RDS(ON), Vgs@10V,Ids@45A = 6m
RDS(ON), Vgs@4.5V,Ids@30A =9m
FEATURES
Advanced trench process technology
High density cell design for ultra low on-resistance
Specially designed for DC/DC converters and motor drivers
Fully characterized avalanche voltage and current
ME70N03A(Pb-Free)
APPLICATIONS
Motherboard (V-Core)
Portable Equipment
DC/DC Converter
Load Switch
LCD Display inverter
IPC
PIN CONFIGURATION
(TO-252)
Top View
Absolute Maximum Ratings (TA=25 Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
TA=25
TA=70
Operating Junction and Storage Temperature Range
Avalanche Energy with Single Pulse(L=0.5mH,Rg=25 )
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDSS
VGSS
ID
IDM
PD
TJ, Tstg
EAS
RθJA
RθJC
Limit
25
±20
50
100
50
23
-55 to 150
115
15
Steady State
40
20
Unit
V
V
A
A
W
Apr, 2007 – Version 4.1
01



Matsuki
Matsuki

ME70N03A Datasheet Preview

ME70N03A Datasheet

25V N-Channel Enhancement Mode MOSFET

No Preview Available !

ME70N03A pdf
25V N-Channel Enhancement Mode MOSFET
ME70N03A(Pb-Free)
Electrical Characteristics (TA =25 Unless Otherwise Specified)
Symbol
STATIC
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistancea
DYNAMIC
Qg
Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
SOURCE-DRAIN DIODE
IS Max.Diode Forward Current
VSD Diode Forward Voltage
Limit
Min Typ Max Unit
VGS=0V, ID=250 A
VDS=VGS, ID=250 A
VDS=0V, VGS=±20V
VDS=20V, VGS=0V
VGS=10V, ID=45A
VGS=4.5V, ID=30A
25 V
1 1.9 3
V
±100 nA
1A
4.5 6
m
7.5 9
VDS=15V, VGS=10V, ID=25A
VDS=15V, VGS=0V,
F=1MHz
VDS=0V, VGS=0V, f=1MHz
RL=15 , VGEN =10V, ID=1A
VDD=15V, RG=6
33
12
9.7
1900
343
93
2.4
17
12
63
9
40
2200
22
16
75
12
nC
pF
ns
IS=20A, VGS=0V
0.85
20
1.2
A
V
Note: a.Pulse test: pulse width =300us, duty cycle =2
Apr, 2007 – Version 4.1
02


Part Number ME70N03A
Description 25V N-Channel Enhancement Mode MOSFET
Maker Matsuki
Total Page 5 Pages
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