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MT18HTF25672P Datasheet Preview

MT18HTF25672P Datasheet

2GB DDR2 SDRAM Registered DIMM

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MT18HTF25672P pdf
512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM
Features
DDR2 SDRAM Registered DIMM (RDIMM)
MT18HTF6472 – 512MB
MT18HTF12872(P) – 1GB
MT18HTF25672(P) – 2GB
For component data sheets, refer to Micron's Web site: www.micron.com
Features
• 240-pin, registered dual in-line memory module
• Fast data transfer rates: PC2-3200, PC2-4200, PC2-
5300, or PC2-6400
• Supports ECC error detection and correction
• VDD = VDDQ = +1.8V
• VDDSPD = +1.7V to +3.6V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Single rank
• Multiple internal device banks for concurrent
operation
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
Figure 1:
240-Pin RDIMM (MO-237
R/C C–Non-Parity, R/C H–Parity)
PCB height: 30mm (1.18in)
Options
• Parity3
• Operating temperature1
Commercial (0°C TA +70°C)
Industrial (–40°C TA +85°C)
• Package
240-pin DIMM (Pb-free)
• Frequency/CAS latency2
2.5ns @CL = 5 (DDR2-800)3
2.5ns @ CL = 6 (DDR2-800)3
3.0ns @ CL = 5 (DDR2-667)3
3.75ns @ CL = 4 (DDR2-533)
5.0ns @ CL = 3 (DDR2-400)
• PCB height
30mm (1.18in)
Marking
P
None
I
Y
-80E
-800
-667
-53E
-40E
Notes: 1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency; registered mode
will add one clock cycle to CL.
3. Not available in 512MB density.
Table 1: Key Timing Parameters
Speed
Grade
-80E
-800
-667
-53E
-40E
Industry
Nomenclature
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
CL = 6
800
Data Rate (MT/s)
CL = 5
800
667
667
CL = 4
533
533
533
533
400
CL = 3
400
400
400
tRCD
(ns)
12.5
15
15
15
15
tRP
(ns)
tRC
(ns)
12.5 55
15 55
15 55
15 55
15 55
PDF: 09005aef80e5e752/Source: 09005aef80e5e626
HTF18C64_128_256x72.fm - Rev. E 3/07 EN
1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.



Micron
Micron

MT18HTF25672P Datasheet Preview

MT18HTF25672P Datasheet

2GB DDR2 SDRAM Registered DIMM

No Preview Available !

MT18HTF25672P pdf
Table 2: Addressing
Refresh count
Row address
Device bank address
Device page size per bank
Device configuration
Column address
Module rank address
512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM
Features
512MB
8K
8K (A0–A12)
4 (BA0, BA1)
1KB
256Mb (64 Meg x 4)
2K (A0–A9, A11)
1 (S0#)
1GB
8K
16K (A0–A13)
4 (BA0, BA1)
1KB
512Mb (128 Meg x 4)
2K (A0–A9, A11)
1 (S0#)
2GB
8K
16K (A0–A13)
8 (BA0, BA1, BA2)
1KB
1Gb (256 Meg x 4)
2K (A0–A9, A11)
1 (S0#)
Table 3:
Part Numbers and Timing Parameters – 512MB Modules
Base device: MT47H64M4,1 256Mb DDR2 SDRAM
Part Number2
MT18HTF6472Y-53E__
MT18HTF6472Y-40E__
Module
Density
512MB
512MB
Configuration
64 Meg x 72
64 Meg x 72
Module
Bandwidth
4.3 GB/s
3.2 GB/s
Memory Clock/
Data Rate
3.75ns/533 MT/s
5.0ns/400 MT/s
Latency
(CL-tRCD-tRP)
4-4-4
3-3-3
Table 4:
Part Numbers and Timing Parameters – 1GB Modules
Base device: MT47H128M4,1 512Mb DDR2 SDRAM
Part Number2
MT18HTF12872(P)Y-80E__
MT18HTF12872(P)Y-800__
MT18HTF12872(P)Y-667__
MT18HTF12872(P)Y-53E__
MT18HTF12872(P)Y-40E__
Module
Density
1GB
1GB
1GB
1GB
1GB
Configuration
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
Module
Bandwidth
6.4 GB/s
6.4 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
Memory Clock/
Data Rate
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
3.75ns/533 MT/s
5.0ns/400 MT/s
Latency
(CL-tRCD-tRP)
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
Table 5:
Part Numbers and Timing Paramters – 2GB Modules
Base device: MT47H256M4,1 1Gb DDR2 SDRAM
Part Number2
MT18HTF25672(P)Y-80E__
MT18HTF25672(P)Y-800__
MT18HTF25672(P)Y-667__
MT18HTF25672(P)Y-53E__
MT18HTF25672(P)Y-40E__
Module
Density
2GB
2GB
2GB
2GB
2GB
Configuration
256 Meg x 72
256 Meg x 72
256 Meg x 72
256 Meg x 72
256 Meg x 72
Module
Bandwith
6.4 GB/s
6.4 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
Memory Clock/
Data Rate
2.5ns/800 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
3.75ns/533 MT/s
5.0ns/400 MT/s
Latency
(CL-tRCD-tRP)
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
Notes:
1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown), designating component and PCB
revisions. Consult factory for current revision codes. Example: MT18HTF6472Y-667D2.
PDF: 09005aef80e5e752/Source: 09005aef80e5e626
HTF18C64_128_256x72.fm - Rev. E 3/07 EN
2 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.


Part Number MT18HTF25672P
Description 2GB DDR2 SDRAM Registered DIMM
Maker Micron
Total Page 18 Pages
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