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MT18VDDF12872 Datasheet Preview

MT18VDDF12872 Datasheet

1GB DDR SDRAM REGISTERED DIMM

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MT18VDDF12872 pdf
DDR SDRAM
REGISTERED DIMM
512MB, 1GB (x72, ECC, SR) PC3200
184-PIN DDR SDRAM RDIMM
MT18VDDF6472 – 512MB
MT18VDDF12872 – 1GB
For the latest data sheet, please refer to the MicronWeb
site: www.micron.com/products/modules
Features
• 184-pin, dual in-line memory module (DIMM)
• Fast data transfer rates: PC3200
• Utilizes 400 MT/s DDR SDRAM components
• Registered inputs with one-clock delay
• Phase-lock loop (PLL) clock driver to reduce loading
• Supports ECC error detection and correction
• 512MB (64 Meg x 72) and 1GB (128 Meg x 72)
• VDD = VDDQ = +2.6V
• VDDSPD = +2.3V to +3.6V
• 2.5V I/O (SSTL_2 compatible)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
• Bidirectional data strobe (DQS) transmitted/received
with data—i.e., source-synchronous data capture
• Differential clock inputs CK and CK#
• Four internal device banks for concurrent operation
• Programmable burst lengths: 2, 4, or 8
• Auto precharge option
• Auto Refresh and Self Refresh modes
• 7.8125µs maximum average periodic refresh
interval
• Serial Presence Detect (SPD) with EEPROM
• Programmable READ CAS latency
• Gold edge contacts
Figure 1: 184-Pin DIMM (MO-206)
Low-Profile 1.125in. (28.58mm)
Very Low Profile 0.72in. (18.29mm)
OPTIONS
• Operating Temperature Range
Commercial (0°C TA +70°C)
• Package
184-pin DIMM (standard)
184-pin DIMM (lead-free)1
• Memory Clock, Speed, CAS Latency2
5ns (200 MHz), 400 MT/s, CL = 3
• PCB
1.125in (28.58mm)
MARKING
none
G
Y
-40B
NOTE: 1. Contact Micron for availability of products.
2. CL = CAS latency; registered Mode adds one
clock cycle to CL.
Table 1: Address Table
Refresh Count
Row Addressing
Device Bank Addressing
Device Configuration
Column Addressing
Module Rank Addressing
512MB
8K
8K (A0–A12)
4 (BA0, BA1)
256Mb (64 Meg x 4)
2K (A0–A9, A11)
1 (S0#)
1GB
8K
8K (A0–A12)
4 (BA0, BA1)
512Mb (128 Meg x 4)
4K (A0–A9, A11, A12)
1 (S0#)
1pdf: 09005aef80f6b913, source: 09005aef80f6b41c
DDAF18C64_128x72G.fm - Rev. C 9/04 EN
©2004 Micron Technology, Inc. All rights reserved.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.



Micron
Micron

MT18VDDF12872 Datasheet Preview

MT18VDDF12872 Datasheet

1GB DDR SDRAM REGISTERED DIMM

No Preview Available !

MT18VDDF12872 pdf
512MB, 1GB (x72, ECC, SR) PC3200
184-PIN DDR SDRAM RDIMM
Table 2: Part Numbers and Timing Parameters
PART NUMBER
MODULE
DENSITY
CONFIGURATION MODULE MEMORY CLOCK/
LATENCY
BANDWIDTH DATA RATE
(CL - tRCD - tRP)
MT18VDDF6472G-40B__
MT18VDDF6472Y-40B__
MT18VDDF12872G-40B__
MT18VDDF12872Y-40B__
512MB
512MB
1GB
1GB
64 Meg x 72
64 Meg x 72
128 Meg x 72
128 Meg x 72
3.2 GB/s
3.2 GB/s
3.2 GB/s
3.2 GB/s
5ns/400 MT/s
5ns/400 MT/s
5ns/400 MT/s
5ns/400 MT/s
3-3-3
3-3-3
3-3-3
3-3-3
NOTE:
All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult factory for
current revision codes. Example: MT18VDDF6472G-40BB1.
pdf: 09005aef80f6b913, source: 09005aef80f6b41c
DDAF18C64_128x72G.fm - Rev. C 9/04 EN
2 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All rights reserved.


Part Number MT18VDDF12872
Description 1GB DDR SDRAM REGISTERED DIMM
Maker Micron
Total Page 30 Pages
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MT18VDDF12872 pdf
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