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Micron
Micron

MT18VDDT12872A Datasheet Preview

MT18VDDT12872A Datasheet

1GB DDR SDRAM UNBUFFERED DIMM

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MT18VDDT12872A pdf
256MB, 512MB, 1GB (x72, ECC, DR), PC3200
184-PIN DDR SDRAM UDIMM
DDR SDRAM
UNBUFFERED DIMM
MT18VDDT3272A – 256MB
MT18VDDT6472A – 512MB
MT18VDDT12872A – 1GB
For the latest data sheet, please refer to the MicronWeb
site: www.micron.com/products/modules
Features
• 184-pin dual in-line memory module (DIMM)
• Fast data transfer rates: PC3200
• CAS Latency 3
• Utilizes 400 MT/s DDR SDRAM components
• Supports ECC error detection and correction
• 256MB (32 Meg x 72), 512MB (64 Meg x 72), and 1GB
(128 Meg x 72)
• VDD = VDDQ = +2.6V
• VDDSPD = +2.3V to +3.6V
• 2.6V I/O (SSTL_2 compatible)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
• Bidirectional data strobe (DQS) transmitted/received
with data—i.e., source-synchronous data capture
• Differential clock inputs CK and CK#
• Four internal device banks for concurrent operation
• Programmable burst lengths: 2, 4, or 8
• Auto precharge option
• Auto Refresh and Self Refresh Modes
• 15.6µs (256MB), 7.8125µs (512MB, 1GB) maximum
average periodic refresh interval
• Serial Presence Detect (SPD) with EEPROM
• Programmable READ CAS latency
• Gold edge contacts
Figure 1: 184-Pin DIMM (MO-206)
1.25in. (31.75mm)
OPTIONS
• Package
184-pin DIMM (Standard)
184-pin DIMM (Lead-free)
• Memory Clock/Speed, CAS Latency
5ns (200MHz), 400MT/s, CL = 3
• PCB
Standard 1.25in. (31.75mm)
MARKING
G
Y
-40B
Table 1: Address Table
Refresh Count
Row Addressing
Device Bank Addressing
Device Configuration
Column Addressing
Module Rank Addressing
256MB
4K
4K (A0–A11)
4 (BA0, BA1)
128Mb (16 Meg x 8)
1K (A0–A9)
2 (S0#, S1#)
512MB
8K
8K (A0–A12)
4 (BA0, BA1)
256Mb (32 Meg x 8)
1K (A0–A9)
2 (S0#, S1#)
1GB
8K
8K (A0–A12)
4 (BA0, BA1)
512Mb (64 Meg x 8)
2K (A0–A9, A11)
2 (S0#, S1#)
pdf: 09005aef80814e61, source: 09005aef80a43eed
DDA18C32_64_128x72AG.fm - Rev. E 9/04 EN
1
©2004 Micron Technology, Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.



Micron
Micron

MT18VDDT12872A Datasheet Preview

MT18VDDT12872A Datasheet

1GB DDR SDRAM UNBUFFERED DIMM

No Preview Available !

MT18VDDT12872A pdf
256MB, 512MB, 1GB (x72, ECC, DR), PC3200
184-PIN DDR SDRAM UDIMM
Table 2: Part Numbers and Timing Parameters
PART NUMBER
MT18VDDT3272AG-40B__
MT18VDDT3272AY-40B__
MT18VDDT6472AG-40B__
MT18VDDT6472AY-40B__
MT18VDDT12872AG-40B__
MT18VDDT12872AY-40B__
MODULE
DENSITY
256MB
256MB
512MB
512MB
1GB
1GB
CONFIGURATION MODULE MEMORY CLOCK/
BANDWIDTH DATA BIT RATE
32 Meg x 72
32 Meg x 72
64 Meg x 72
64 Meg x 72
128 Meg x 72
128 Meg x 72
3.2 GB/s
3.2 GB/s
3.2 GB/s
3.2 GB/s
3.2 GB/s
3.2 GB/s
5ns/400 MT/s
5ns/400 MT/s
5ns/400 MT/s
5ns/400 MT/s
5ns/400 MT/s
5ns/400 MT/s
LATENCY
(CL - tRCD - tRP)
3-3-3
3-3-3
3-3-3
3-3-3
3-3-3
3-3-3
NOTE:
All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult factory for
current revision codes. Example: MT18VDDT6472AG-40BB1.
pdf: 09005aef80814e61, source: 09005aef80a43eed
DDA18C32_64_128x72AG.fm - Rev. E 9/04 EN
2 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc.


Part Number MT18VDDT12872A
Description 1GB DDR SDRAM UNBUFFERED DIMM
Maker Micron
Total Page 29 Pages
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