http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





Micron
Micron

MT29F128G08AMAAA Datasheet Preview

MT29F128G08AMAAA Datasheet

NAND Flash Memory

No Preview Available !

MT29F128G08AMAAA pdf
Micron Confidential and Proprietary
32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND
Features
NAND Flash Memory
MT29F32G08ABAAA, MT29F64G08AFAAA, MT29F128G08A[J/K/M]AAA
MT29F256G08AUAAA, MT29F32G08ABCAB, MT29F64G08AECAB
MT29F128G08A[K/M]CAB, MT29F256G08AUCAB
Features
• Open NAND Flash Interface (ONFI) 2.2-compliant1
• Single-level cell (SLC) technology
• Organization
– Page size x8: 8640 bytes (8192 + 448 bytes)
– Block size: 128 pages (1024K + 56K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 32Gb: 4096 blocks;
64Gb: 8192 blocks;
128Gb: 16,384 blocks;
256Gb: 32,786 blocks
• Synchronous I/O performance
– Up to synchronous timing mode 5
– Clock rate: 10ns (DDR)
– Read/write throughput per pin: 200 MT/s
• Asynchronous I/O performance
– Up to asynchronous timing mode 5
tRC/tWC: 20ns (MIN)
– Read/write throughput per pin: 50 MT/s
• Array performance
– Read page: 35µs (MAX)
– Program page: 350µs (TYP)
– Erase block: 1.5ms (TYP)
• Operating Voltage Range
– VCC: 2.7–3.6V
– VCCQ: 1.7–1.95V, 2.7–3.6V
• Command set: ONFI NAND Flash Protocol
• Advanced Command Set
– Program cache
– Read cache sequential
– Read cache random
– One-time programmable (OTP) mode
– Multi-plane commands
– Multi-LUN operations
– Read unique ID
– Copyback
• First block (block address 00h) is valid when ship-
ped from factory. For minimum required ECC, see
Error Management (page 114).
• RESET (FFh) required as first command after pow-
er-on
• Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
• Data strobe (DQS) signals provide a hardware meth-
od for synchronizing data DQ in the synchronous
interface
• Copyback operations supported within the plane
from which data is read
• Quality and reliability
– Data retention: JESD47G compliant; see qualifi-
cation report
– Endurance: 60,000 PROGRAM/ERASE cycles
• Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
• Package
– 52-pad LGA
– 48-pin TSOP
– 100-ball BGA
– 132-ball BGA
Note: 1. The ONFI 2.2 specification is available at
www.onfi.org.
PDF: 09005aef83e0bed4
M73A_32Gb_64Gb_128Gb_256Gb_AsyncSync_NAND.pdf Rev. F 5/12 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.



Micron
Micron

MT29F128G08AMAAA Datasheet Preview

MT29F128G08AMAAA Datasheet

NAND Flash Memory

No Preview Available !

MT29F128G08AMAAA pdf
Micron Confidential and Proprietary
32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND
Features
Part Numbering Information
Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by
using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type,
visit www.micron.com/products. Contact the factory for devices not found.
Figure 1: Part Numbering
MT 29F 32G 08 A B A A A WP
Micron Technology
NAND Flash
29F = NAND Flash memory
Density
32G = 32Gb
64G = 64Gb
128G = 128Gb
256G = 256Gb
Device Width
08 = 8 bits
Level
Bit/Cell
A 1-bit
Classification
Die # of CE# # of R/B# I/O
B1
1
1 Common
E2
2
2 Separate
F2
2
2 Common
J4
2
2 Common
K4
2
2 Separate
M4
4
4 Separate
U8
4
4 Separate
Operating Voltage Range
A = VCC: 3.3V (2.7–3.6V), VCCQ: 3.3V (2.7–3.6V)
C = VCC: 3.3V (2.7–3.6V), VCCQ: 1.8V (1.7–1.95V)
Note: 1. Pb-free package.
Z ES :A
Design Revision
A = First revision
Production Status
Blank = Production
ES = Engineering sample
Reserved for Future Use
Blank
Wafer Process Applied
Blank = Polyimide Process Not Applied
Z = Polyimide Process Applied
Operating Temperature Range
Blank = Commercial (0°C to +70°C)
IT = Industrial (–40°C to +85°C)
Speed Grade (synchronous mode only)
-10 = 200 MT/s
Package Code
C5 = 52-pad VLGA 14mm x 18mm x 1.0mm1
H1 = 100-ball VBGA 12mm x 18mm x 1.0mm1
H2 = 100-ball TBGA 12mm x 18mm x 1.2mm1
H3 = 100-ball LBGA 12mm x 18mm x 1.4mm1
J1 = 132-ball VBGA 12mm x 18mm x 1.0mm1
J2 = 132-ball TBGA 12mm x 18mm x 1.2mm1
J3 = 132-ball LBGA 12mm x 18mm x 1.4mm1
WP = 48-pin TSOP1 (CPL)
Interface
A = Async only
B = Sync/Async
Generation Feature Set
A = First set of device features
PDF: 09005aef83e0bed4
M73A_32Gb_64Gb_128Gb_256Gb_AsyncSync_NAND.pdf Rev. F 5/12 EN
2 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.


Part Number MT29F128G08AMAAA
Description NAND Flash Memory
Maker Micron
Total Page 30 Pages
PDF Download
MT29F128G08AMAAA pdf
Download PDF File
MT29F128G08AMAAA pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 MT29F128G08AMAAA NAND Flash Memory Micron
Micron
MT29F128G08AMAAA pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components