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Micron
Micron

MT29F16G08CBACA Datasheet Preview

MT29F16G08CBACA Datasheet

NAND Flash Memory

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MT29F16G08CBACA pdf
Micron Confidential and Proprietary
16Gb, 32Gb Asynchronous/Synchronous NAND
Features
NAND Flash Memory
MT29F16G08CBACA, MT29F32G08CFACA, MT29F16G08CBACB,
MT29F32G08CFACB
Features
• Open NAND Flash Interface (ONFI) 2.2-compliant1
• Multiple-level cell (MLC) technology
• Organization
– Page size x8: 4320 bytes (4096 + 224 bytes)
– Block size: 256 pages (1024K + 56K bytes)
– Plane size: 2 planes x 1024 blocks per plane
– Device size: 16Gb: 2048 blocks;
32Gb: 4096 blocks
• Synchronous I/O performance
– Up to synchronous timing mode 4
– Clock rate: 12ns (DDR)
– Read/write throughput per pin: 166 MT/s
• Asynchronous I/O performance
– Up to asynchronous timing mode 5
– Read/write throughput per pin: 50 MT/s
tRC/tWC: 20ns (MIN)
• Array performance
– Read page: 75µs (MAX)
– Program page: 1300µs (TYP)
– Erase block: 3.8ms (TYP)
• Operating Voltage Range
– VCC: 2.7–3.6V
– VCCQ: 2.7–3.6V
• Command set: ONFI NAND Flash Protocol
• Advanced Command Set
– Program cache
– Read cache sequential
– Read cache random
– One-time programmable (OTP) mode
– Multi-plane commands
– Multi-LUN operations
– Read unique ID
– Copyback
• First block (block address 00h) is valid when ship-
ped from factory. For minimum required ECC, see
Error Management (page 97).
• RESET (FFh) required as first command after pow-
er-on
• Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
• Copyback operations supported within the plane
from which data is read
• Quality and reliability
– Data retention: JESD47G compliant; see qualifi-
cation report
– Endurance: 3000 PROGRAM/ERASE cycles
• Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
• Package
– 56-ball BGA
– 48-pin TSOP
Note: 1. The ONFI 2.2 specification is available at
www.onfi.org.
PDF: 09005aef841356b0
L72A_16Gb_32Gb_Async_Sync_NAND.pdf – Rev. E 9/12 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.



Micron
Micron

MT29F16G08CBACA Datasheet Preview

MT29F16G08CBACA Datasheet

NAND Flash Memory

No Preview Available !

MT29F16G08CBACA pdf
Micron Confidential and Proprietary
16Gb, 32Gb Asynchronous/Synchronous NAND
Features
Part Numbering Information
Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by
using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type,
visit www.micron.com/products. Contact the factory for devices not found.
Figure 1: Part Numbering
MT 29F 16G 08 C B A C A WP
Micron Technology
NAND Flash
29F = NAND Flash memory
Density
16G = 16Gb
32G = 32Gb
Device Width
08 = 8 bits
Level
Bit/Cell
C 2-bit
Classification
Die # of CE# # of R/B# I/O
B1
1
1 Common
F2
2
2 Common
Operating Voltage Range
A = VCC: 3.3V (2.7–3.6V), VCCQ: 3.3V (2.7–3.6V)
ES :C
Design Revision
C = Third revision
Production Status
Blank = Production
ES = Engineering sample
Reserved for Future Use
Blank
Operating Temperature Range
Blank = Commercial (0°C to +70°C)
IT = Industrial (–40°C to +85°C)
Speed Grade (synchronous mode only)
12 = 166 MT/s
Package Code
H5 = 56-ball VFBGA 9.5mm x 12.8mm x 0.9mm1
WP = 48-pin TSOP1 (CPL)
Interface
A = Async only
B = Sync/Async
Generation Feature Set
C = Third set of device features
Note: 1. Pb-free package.
PDF: 09005aef841356b0
L72A_16Gb_32Gb_Async_Sync_NAND.pdf – Rev. E 9/12 EN
2 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.


Part Number MT29F16G08CBACA
Description NAND Flash Memory
Maker Micron
Total Page 30 Pages
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