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MT29F1GxxABB Datasheet Preview

MT29F1GxxABB Datasheet

1Gb NAND Flash Memory

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1Gb: x8, x16 NAND Flash Memory
Features
1Gb NAND Flash Memory
MT29F1GxxABB
Features
• Organization
Page size x8: 2,112 bytes (2,048 + 64 bytes)
Page size x16: 1,056 words (1,024 + 32 words)
Block size: 64 pages (128K + 4K bytes)
Device size: 1Gb: 1,024 blocks
• READ performance
Random READ: 25µs (MAX)
Sequential READ: 50ns (MIN)
• WRITE performance
PROGRAM PAGE: 250µs (TYP)
BLOCK ERASE: 2.0ms (TYP)
• Endurance: 100,000 PROGRAM/ERASE cycles
• Data retention: 10 years
• The first block (block address 00h) is guaranteed to
be valid without ECC (up to 1,000 PROGRAM/
ERASE cycles)
• VCC: 1.65–1.95V
• Automated PROGRAM and ERASE
• Basic NAND Flash command set
PAGE READ, RANDOM DATA READ, READ ID,
READ STATUS, PROGRAM PAGE, RANDOM DATA
INPUT, PROGRAM PAGE CACHE MODE, INTER-
NAL DATA MOVE, INTERNAL DATA MOVE with
RANDOM DATA INPUT, BLOCK ERASE, RESET
• New commands
PAGE READ CACHE MODE
READ ID2 (contact factory)
READ UNIQUE ID (contact factory)
Programmable I/O
OTP
BLOCK LOCK
• Operation status byte: Provides a software method
for detecting:
Operation completion
Pass/fail condition
Write-protect status
• Ready/busy# signal (R/B#): Provides a hardware
method of detecting operation completion
• LOCK signal: Protects selectable ranges of blocks
Figure 1: 63-Ball VFBGA x8
• WP# signal: Write-protects the entire device
• Reset required after power-up
Options1
• Configuration
x8
x16
• Package
63-ball VFBGA
13mm x 10.5mm x 1.0mm
• Operating temperature
Commercial temperature (0 to +70°C)
Extended temperature (–40°C to +85°C)
Notes: 1. For part numbers and device markings, see
Figure 2 on page 2.
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__1.fm - Rev. E 1/08 EN
1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2006 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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Micron
Micron

MT29F1GxxABB Datasheet Preview

MT29F1GxxABB Datasheet

1Gb NAND Flash Memory

No Preview Available !

MT29F1GxxABB pdf
www.DataSheet.co.kr
1Gb: x8, x16 NAND Flash Memory
Part Numbering Information
Part Numbering Information
Micron NAND Flash devices are available in several configurations and
densities.
Figure 2: Part Number Chart
MT 29F 1G 08 A B B HC xx xx xx ES :B
Micron Technology
Product Family
29F = Single-Supply NAND Flash Memory
Density
1G = 1Gb
Device Width
08 = 8 bits
16 = 16 bits
Classification
# of die # of CE# # of R/B# I/O
A1
1 1 Common
Die Revision
B = Second generation
Production Status
Blank = Production
ES = Engineering Sample
QS = Qualification Sample
Operating Temperature Range
Blank = Commercial (0°C to +70°C)
ET = Extended (–40° to +85°C)
Block Option
Reserved for Future Use
Operating Voltage Range
B = 1.8V (1.65V–1.95V)
Feature Set
A = Feature set A
B = Feature set B
Flash Performance
Reserved for Future Use
Package Codes
HC = 63-pin VFBGA (lead-free)
Valid Part Number Combinations
After building the part number from the part numbering chart, verify that the part
number is offered and valid by using the Micron Parametric Part Search Web site at
www.micron.com/products/parametric. If the device required is not on this list, contact
the factory.
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__1.fm - Rev. E 1/08 EN
2 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2006 Micron Technology, Inc. All rights reserved.
Datasheet pdf - http://www.DataSheet4U.net/


Part Number MT29F1GxxABB
Description 1Gb NAND Flash Memory
Maker Micron
Total Page 30 Pages
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