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MT29F32G08AECCB Datasheet Preview

MT29F32G08AECCB Datasheet

NAND Flash Memory

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MT29F32G08AECCB pdf
Micron Confidential and Proprietary
16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND
Features
NAND Flash Memory
MT29F16G08ABACA, MT29F32G08AFACA
MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB
Features
• Open NAND Flash Interface (ONFI) 2.2-compliant1
• Single-level cell (SLC) technology
• Organization
– Page size x8: 4320 bytes (4096 + 224 bytes)
– Block size: 128 pages (512K + 28K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 16Gb: 4096 blocks;
32Gb: 8192 blocks; 64Gb: 16,384 blocks
• Synchronous I/O performance
– Up to synchronous timing mode 5
– Clock rate: 10ns (DDR)
– Read/write throughput per pin: 200 MT/s
• Asynchronous I/O performance
– Up to asynchronous timing mode 5
tRC/tWC: 20ns (MIN)
• Array performance
– Read page: 35µs (MAX)
– Program page: 350µs (TYP)
– Erase block: 1.5ms (TYP)
• Operating Voltage Range
– VCC: 2.7–3.6V
– VCCQ: 1.7-1.95V, 2.7–3.6V
• Command set: ONFI NAND Flash Protocol
• Advanced Command Set
– Program cache
– Read cache sequential
– Read cache random
– One-time programmable (OTP) mode
– Multi-plane commands
– Multi-LUN operations
– Read unique ID
– Copyback
• First block (block address 00h) is valid when ship-
ped from factory. For minimum required ECC, see
Error Management (page 100).
• RESET (FFh) required as first command after pow-
er-on
• Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
• Data strobe (DQS) signals provide a hardware meth-
od for synchronizing data DQ in the synchronous
interface
• Copyback operations supported within the plane
from which data is read
• Quality and reliability
– Data retention: JESD47 compliant; see qualifica-
tion report
– Endurance: 60,000 PROGRAM/ERASE cycles
• Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
• Package
– 48-pin TSOP
– 100-ball BGA
Note: 1. The ONFI 2.2 specification is available at
www.onfi.org.
PDF: 09005aef844588dc
M72A_16Gb_32Gb_64Gb_AsyncSync_NAND.pdf – Rev. G 5/12 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.



Micron
Micron

MT29F32G08AECCB Datasheet Preview

MT29F32G08AECCB Datasheet

NAND Flash Memory

No Preview Available !

MT29F32G08AECCB pdf
Micron Confidential and Proprietary
16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND
Features
Part Numbering Information
Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by
using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type,
visit www.micron.com/products. Contact the factory for devices not found.
Figure 1: Part Numbering
MT 29F 16G 08 A B A C A WP
Micron Technology
NAND Flash
29F = NAND Flash memory
Density
16G = 16Gb
32G = 32Gb
64G = 64Gb
Device Width
08 = 8 bits
Level
Bit/Cell
A 1-bit
Classification
Die # of CE# # of R/B# I/O
B1
1
1 Common
E2
2
2 Separate
F2
K4
2
2
2 Common
2 Separate
Operating Voltage Range
A = VCC: 3.3V (2.7–3.6V), VCCQ: 3.3V (2.7–3.6V)
C = VCC: 3.3V (2.7–3.6V), VCCQ: 1.8V (1.7–2.95V)
Note: 1. Pb-free package.
Z ES :C
Design Revision
C = Third revision
Production Status
Blank = Production
ES = Engineering sample
Reserved for Future Use
Blank
Wafer Process Applied
Blank = Polyimide Process Not Applied
Z = Polyimide Process Applied
Operating Temperature Range
Blank = Commercial (0°C to +70°C)
IT = Industrial (–40°C to +85°C)
Speed Grade (synchronous mode only)
-10 = 200 MT/s
Package Code
H1 = 100-ball VBGA 12mm x 18mm x 1.0mm1
H2 = 100-ball TBGA 12mm x 18mm x 1.2mm 1
WP = 48-pin TSOP1 (CPL)
Interface
A = Async only
B = Sync/Async
Generation Feature Set
C = Third set of device features
PDF: 09005aef844588dc
M72A_16Gb_32Gb_64Gb_AsyncSync_NAND.pdf – Rev. G 5/12 EN
2 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.


Part Number MT29F32G08AECCB
Description NAND Flash Memory
Maker Micron
Total Page 30 Pages
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