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Micron

MT29F8G08ABCBB Datasheet Preview

MT29F8G08ABCBB Datasheet

NAND Flash Memory

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MT29F8G08ABCBB pdf
Micron Confidential and Proprietary
8Gb Asynchronous/Synchronous NAND
Features
NAND Flash Memory
MT29F8G08ABABA, MT29F8G08ABCBB
Features
Open NAND Flash Interface (ONFI) 2.1-compliant1
Single-level cell (SLC) technology
Organization
Page size x8: 4320 bytes (4096 + 224 bytes)
Block size: 128 pages (512K +28 K bytes)
Plane size: 2 planes x 1024 blocks per plane
Device size: 8Gb: 2048 blocks
Synchronous I/O performance
Up to synchronous timing mode 4
Clock rate: 12ns (DDR)
Read/write throughput per pin: 166 MT/s
Asynchronous I/O performance
Up to asynchronous timing mode 4
tRC/tWC: 25ns (MIN)
Array performance
Read page: 25µs (MAX)
Program page: 230µs (TYP)
Erase block: 700µs (TYP)
Operating Voltage Range
VCC: 2.7–3.6V
VCCQ: 1.7–1.95V, 2.7–3.6V
Command set: ONFI NAND Flash Protocol
Advanced Command Set
Program cache
Read cache sequential
Read cache random
One-time programmable (OTP) mode
Multi-plane commands
Multi-LUN operations
Read unique ID
Copyback
First block (block address 00h) is valid when ship-
ped from factory. For minimum required ECC, see
Error Management (page 93).
RESET (FFh) required as first command after power-
on
Operation status byte provides software method for
detecting
Operation completion
Pass/fail condition
Write-protect status
Data strobe (DQS) signals provide a hardware meth-
od for synchronizing data DQ in the synchronous
interface
Copyback operations supported within the plane
from which data is read
Quality and reliability
Data retention: 10 years
Endurance: 100,000 PROGRAM/ERASE cycles
Operating temperature:
Commercial: 0°C to +70°C
Industrial (IT): –40ºC to +85ºC
Package
48-pin TSOP
100-ball BGA
Note: 1. The ONFI 2.1 specification is available at
www.onfi.org.
PDF: 09005aef8386131b
Rev. C 8/10 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.



Micron
Micron

MT29F8G08ABCBB Datasheet Preview

MT29F8G08ABCBB Datasheet

NAND Flash Memory

No Preview Available !

MT29F8G08ABCBB pdf
Micron Confidential and Proprietary
8Gb Asynchronous/Synchronous NAND
Features
Part Numbering Information
Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by
using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type,
visit www.micron.com/products. Contact the factory for devices not found.
Figure 1: Part Numbering
MT 29F 8G 08 A B A B A WP
Micron Technology
NAND Flash
29F = NAND Flash memory
Density
8G = 8Gb
Device Width
08 = 8 bits
Level
Bit/Cell
A 1-bit
Classification
Die # of CE# # of R/B# I/O
B1
1
1 Common
Operating Voltage Range
A = VCC: 3.3V (2.7–3.6V), VCCQ: 3.3V (2.7–3.6V)
C = VCC: 3.3V (2.7–3.6V), VCCQ: 1.8V (1.7–1.95V)
Generation Feature Set
B = Second set of device features
Note: 1. Pb-free package.
ES :B
Design Revision
B = Second revision
Production Status
Blank = Production
ES = Engineering sample
Reserved for Future Use
Blank
Operating Temperature Range
Blank = Commercial (0°C to +70°C)
IT = Extended (–40°C to +85°C)
Speed Grade (synchronous mode only)
-12 = 166 MT/s
Package Code
H1 = 100-ball VBGA 12mm x 18mm x 1.0 mm1
WP = 48-pin TSOP1 (CPL)
Interface
A = Async only
B = Sync/Async
PDF: 09005aef8386131b
Rev. C 8/10 EN
2 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.


Part Number MT29F8G08ABCBB
Description NAND Flash Memory
Maker Micron
Total Page 30 Pages
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