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MT29F8G08ADBDAH4 Datasheet Preview

MT29F8G08ADBDAH4 Datasheet

NAND Flash Memory

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MT29F8G08ADBDAH4 pdf
Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Features
NAND Flash Memory
MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4,
MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP,
MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4,
MT29F8G08ADBDAH4, MT29F8G16ADADAH4, MT29F8G16ADBDAH4,
MT29F16G08AJADAWP
Features
• Open NAND Flash Interface (ONFI) 1.0-compliant1
• Single-level cell (SLC) technology
• Organization
– Page size x8: 2112 bytes (2048 + 64 bytes)
– Page size x16: 1056 words (1024 + 32 words)
– Block size: 64 pages (128K + 4K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks
16Gb: 16,384 blocks
• Asynchronous I/O performance
tRC/tWC: 20ns (3.3V), 25ns (1.8V)
• Array performance
– Read page: 25µs 3
– Program page: 200µs (TYP: 1.8V, 3.3V)3
– Erase block: 700µs (TYP)
• Command set: ONFI NAND Flash Protocol
• Advanced command set
– Program page cache mode4
– Read page cache mode 4
– One-time programmable (OTP) mode
– Two-plane commands 4
– Interleaved die (LUN) operations
– Read unique ID
– Block lock (1.8V only)
– Internal data move
• Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
• Ready/Busy# (R/B#) signal provides a hardware
method of detecting operation completion
• WP# signal: Write protect entire device
• First block (block address 00h) is valid when ship-
ped from factory with ECC. For minimum required
ECC, see Error Management.
• Block 0 requires 1-bit ECC if PROGRAM/ERASE cy-
cles are less than 1000
• RESET (FFh) required as first command after pow-
er-on
• Alternate method of device initialization (Nand_In-
it) after power up (contact factory)
• Internal data move operations supported within the
plane from which data is read
• Quality and reliability
– Data retention: 10 years
– Endurance: 100,000 PROGRAM/ERASE cycles
• Operating voltage range
– VCC: 2.7–3.6V
– VCC: 1.7–1.95V
• Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
• Package
– 48-pin TSOP type 1, CPL2
– 63-ball VFBGA
Notes:
1. The ONFI 1.0 specification is available at
www.onfi.org.
2. CPL = Center parting line.
3. See Program and Erase Characteristics for
tR_ECC and tPROG_ECC specifications.
4. These commands supported only with ECC
disabled.
PDF: 09005aef83b25735
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Free Datasheet http://www.datasheet-pdf.com/



Micron
Micron

MT29F8G08ADBDAH4 Datasheet Preview

MT29F8G08ADBDAH4 Datasheet

NAND Flash Memory

No Preview Available !

MT29F8G08ADBDAH4 pdf
Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Features
Part Numbering Information
Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by
using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type,
visit www.micron.com/products. Contact the factory for devices not found.
Figure 1: Marketing Part Number Chart
MT 29F 4G 08 A B A D A WP
Micron Technology
Product Family
29F = NAND Flash memory
Density
4G = 4Gb
8G = 8Gb
16G = 16Gb
Device Width
08 = 8-bit
16 = 16-bit
Level
A = SLC
Classification
Mark Die nCE RnB I/O Channels
B1
11
1
D2
11
1
J4
22
1
Operating Voltage Range
A = 3.3V (2.7–3.6V)
B = 1.8V (1.7–1.95V)
Feature Set
D = Feature set D
IT
ES :D
Design Revision (shrink)
Production Status
Blank = Production
ES = Engineering sample
MS = Mechanical sample
QS = Qualification sample
Special Options
Blank
X = Product longevity program (PLP)
Operating Temperature Range
Blank = Commercial (0°C to +70°C)
IT = Industrial (–40°C to +85°C)
Speed Grade
Blank
Package Code
WP = 48-pin TSOP 1
HC = 63-ball VFBGA (10.5 x 13 x 1.0mm)
H4 = 63-ball VFBGA (9 x 11 x 1.0mm)
Interface
A = Async only
PDF: 09005aef83b25735
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN
2 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Free Datasheet http://www.datasheet-pdf.com/


Part Number MT29F8G08ADBDAH4
Description NAND Flash Memory
Maker Micron
Total Page 30 Pages
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