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Micron Semiconductor
Micron Semiconductor

APT19F100J Datasheet Preview

APT19F100J Datasheet

N-Channel FREDFET

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APT19F100J pdf
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APT19F100J
1000V, 19A, 0.46Ω Max, trr ≤270ns
N-Channel FREDFET
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent niose immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
SS
G D SOT-227
"UL Recognized"
ISOTOP®
file # E145592
APT19F100J
Single die FREDFET G
D
S
FEATURES
• Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
RθCS
TJ,TSTG
VIsolation
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
WT Package Weight
Torque Terminals and Mounting Screws.
Microsemi Website - http://www.microsemi.com
Ratings
19
12
120
±30
1875
16
Min
-55
2500
Typ
0.15
1.03
29.2
Max
460
0.27
150
10
1.1
Unit
A
V
mJ
A
Unit
W
°C/W
°C
V
oz
g
in·lbf
N·m
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Micron Semiconductor
Micron Semiconductor

APT19F100J Datasheet Preview

APT19F100J Datasheet

N-Channel FREDFET

No Preview Available !

APT19F100J pdf
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min
VBR(DSS)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
1000
∆VBR(DSS)/∆TJ Breakdown Voltage Temperature Coefficient
RDS(on)
Drain-Source On Resistance 3
Reference to 25°C, ID = 250µA
VGS = 10V, ID = 16A
VGS(th)
∆VGS(th)/∆TJ
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
VGS = VDS, ID = 2.5mA
3
IDSS Zero Gate Voltage Drain Current
VDS = 1000V
VGS = 0V
TJ = 25°C
TJ = 125°C
IGSS Gate-Source Leakage Current
VGS = ±30V
APT29F100B2_L
Typ Max Unit
V
1.15 V/°C
0.39 0.46
45V
-10 mV/°C
250
1000
µA
±100 nA
Dynamic Characteristics
Symbol
gfs
Ciss
Crss
Coss
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
TJ = 25°C unless otherwise specified
Test Conditions
Min
VDS = 50V, ID = 16A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr) 4
Co(er) 5
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
VGS = 0V, VDS = 0V to 667V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
VGS = 0 to 10V, ID = 16A,
VDS = 500V
Resistive Switching
VDD = 667V, ID = 16A
RG = 2.2Ω 6 , VGG = 15V
Typ
34
8500
115
715
290
150
260
46
125
39
35
130
33
Max
Unit
S
pF
nC
ns
Source-Drain Diode Characteristics
Symbol Parameter
Test Conditions
Min Typ Max Unit
IS
ISM
VSD
trr
Qrr
Irrm
dv/dt
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
D
G
S
ISD = 16A, TJ = 25°C, VGS = 0V
TJ = 25°C
ISD = 16A 3
diSD/dt = 100A/µs
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
ISD ≤ 16A, di/dt ≤1000A/µs, VDD = 667V,
TJ = 125°C
100
A
120
1.1
230 270
500 640
13
35
11
15
V
ns
µC
A
25 V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 14.65mH, RG = 2.2Ω, IAS = 16A.
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(cr) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -2.47E-7/VDS^2 + 4.36E-8/VDS + 8.44E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.


Part Number APT19F100J
Description N-Channel FREDFET
Maker Micron Semiconductor
Total Page 4 Pages
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