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Micron Technology
Micron Technology

MT28F016S5 Datasheet Preview

MT28F016S5 Datasheet

2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY

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MT28F016S5 pdf
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ADVANCE
2 MEG x 8
SMART 5 EVEN-SECTORED FLASH MEMORY
FLASH MEMORY
MT28F016S5
5V Only, Dual Supply (Smart 5)
FEATURES
• Thirty-two 64KB erase blocks
• Deep Power-Down Mode:
PIN ASSIGNMENT (Top View)
10µA MAX
• Smart 5 technology:
40-Pin TSOP Type I
5V ±10% VCC
5V ±10% VPP application/production
programming
12V VPP tolerant compatibility production
A19
A18
programming
• Address access time: 90ns
• Industry-standard pinouts
A17
A16
A15
A14
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
A13
A12
CE#
VCC
VPP
OPTIONS
MARKING
RP#
A11
• Timing
90ns access
-9
DataSheet4U.AcA1o90m
A8
A7
• Package
Plastic 40-pin TSOP Type 1 (10mm x 20mm) VG
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40 A20
39 NC
38 WE#
37 OE#
36 RY/BY#
35 DQ7
34 DQ6
33 DQ5
32 DQ4
31 VCC
30 VSS
29 VSS
28 DQ3
27 DQ2
26 DQ1
25 DQ0
24 A0
23 A1
22 A2
21 A3
DataShee
Part Number Example:
MT28F016S5VG-9
GENERAL DESCRIPTION
The MT28F016S5 is a nonvolatile, electrically block-
erasable (flash), programmable, read-only memory con-
taining 2,097,152 bytes (8 bits). Writing or erasing the
device is done with a 5V VPP voltage, while all opera-
tions are performed with a 5V VCC. Due to process
technology advances, 5V VPP is optimal for application
and production programming. For backward compat-
ibility with SmartVoltage technology, 12V VPP is sup-
ported for a maximum of 100 cycles and may be
connected for up to 100 cumulative hours. The device
is fabricated with Micron’s advanced CMOS floating-
gate process.
DataSheet4U.com
The MT28F016S5 is organized into 32 separately
erasable blocks. ERASEs may be interrupted to allow
other operations with the ERASE SUSPEND command.
After the ERASE SUSPEND command is issued, READ
operations may be executed.
Operations are executed with commands from an
industry-standard command set. In addition to status
register polling, the MT28F016S5 provides a ready/
busy# (RY/BY#) output to indicate WRITE and ERASE
completion.
Please refer to Micron’s Web site (www.micron.com/
flash/htmls/datasheets.html) for the latest data sheet.
2 Meg x 8 Smart 5 Even-Sectored Flash Memory
F42.p65 – Rev. 1/00
1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000, Micron Technology, Inc.
DataSheet4 U .com



Micron Technology
Micron Technology

MT28F016S5 Datasheet Preview

MT28F016S5 Datasheet

2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY

No Preview Available !

MT28F016S5 pdf
www.DataSheet4U.com
ADVANCE
2 MEG x 8
SMART 5 EVEN-SECTORED FLASH MEMORY
FUNCTIONAL BLOCK DIAGRAM
A0-A20
CE#
OE#
WE#
RP#
VCC
RY/BY#
et4U.com
VPP
I/O
Control
Logic
Addr.
Buffer/
Latch
21
Power
(Current)
Control
Addr.
Counter
10
11
64KB Memory Block (0)
64KB Memory Block (1)
64KB Memory Block (2)
Command
Execution
Logic
State
Machine
VPP
Switch/
Pump
Y-
Decoder
64KB Memory Block (29)
64KB Memory Block (30)
64KB Memory Block (31)
Y - Select Gates
Sense Amplifiers
Write/Erase-Bit
Compare and Verify
Status
Register
DataSheet4U.com
Identification
Register
Input
Bu8ffer
8
Input
Data
Latch
8
8
Output
Buffer
DQ0-DQ7
DataShee
DataSheet4U.com
2 Meg x 8 Smart 5 Even-Sectored Flash Memory
F42.p65 – Rev. 1/00
DataSheet4 U .com
2 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000, Micron Technology, Inc.


Part Number MT28F016S5
Description 2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY
Maker Micron Technology
Total Page 24 Pages
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