http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





Micron Technology
Micron Technology

MT28F160A3 Datasheet Preview

MT28F160A3 Datasheet

FLASH MEMORY

No Preview Available !

MT28F160A3 pdf
www.DataSheet4U.com
ADVANCE
1 MEG x 16
ENHANCED BOOT BLOCK FLASH MEMORY
FLASH MEMORY
MT28F160A3
Low Voltage, Extended Temperature
FEATURES
• Thirty-nine erase blocks:
Two 4K-word boot blocks (protected)
BALL ASSIGNMENT (Top View)
Six 4K-word parameter blocks
Thirty-one 32K-word main memory blocks
46-Ball FBGA
• VCC, VCCQ and VPP voltages:
2.7V–3.3V VCC and VPP
12345678
2.7V–3.3V VCCQ*
5V VPP fast programming voltage
• Address access times:
90ns, 110ns at 2.7V–3.3V
A
A13 A11
A8
VPP WP# A19
A7
A4
B
A14 A10 WE# RP# A18 A17
A5
A2
• Low power consumption:
Standby and deep power-down mode < 1µA
C A15 A12 A9
A6 A3 A1
(typical ICC)
Automatic power saving feature (APS mode)
D A16 DQ14 DQ5 DQ11 DQ2 DQ8 CE# A0
• Enhanced WRITE/ERASE SUSPEND (1µs typical)
• Industry-standard command set compatibility
E VCCQ DQ15 DQ6 DQ12 DQ3 DQ9 DQ0 VSS
• Hardware block protection
OPTIONS
F VSS DQ7 DQ13 DQ4 VCC DQ10 DQ1 OE#
NUMDBaEtaRSheet4U.com
• Timing
90ns access
-9
(Ball Down)
110ns access
-11
DataShee
• Boot Block Starting Address
Top (FFFFFH)
Bottom (00000H)
NOTE: See page 3 for Ball Description Table.
T See last page for mechanical drawing.
B
• Package
46-ball FBGA (6 x 8 ball grid)
• Temperature Range
Commercial (0°C to +70°C)
Extended (-40°C to +85°C)
*Lower VCCQ ranges are available upon request.
Part Number Example:
MT28F160A3FD-11 TET
FD
None
ET
GENERAL DESCRIPTION
The MT28F160A3 is a nonvolatile, electrically block-
erasable (flash), programmable, read-only memory con-
taining 16,777,216 bits organized as 1,048,576 words
(16 bits).
The MT28F160A3 is manufactured on 0.22µm process
technology in a 48-ball FBGA package. The device has an
I/O supply of 2.7V (MIN). Programming in production is
accomplished by using high voltage which can be sup-
plied on a separate line.
The embedded WORD WRITE and BLOCK ERASE
functions are fully automated by an on-chip write state
machine (WSM), which simplifies these operations and
relieves the system processor of secondary tasks. The
WSM status can be monitored by an on-chip status
register to determine the progress of program/erase tasks.
Please refer to Micron’s Web site (www.micron.com/
flash) for the latest data sheet.
DEVICE MARKING
Due to the size of the package, Micron’s standard part
number is not printed on the top of each device. Instead,
an abbreviated device mark comprised of a five-digit
alphanumeric code is used. The abbreviated device marks
are cross referenced to Micron part numbers in
Table 1.
DataSheet4U.com1 Meg x 16 Enhanced Boot Block Flash Memory
MT28F160A3_3.p65 – Rev. 3, Pub. 8/01
1
©2001, Micron Technology, Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND
ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET
MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.
DataSheet4 U .com



Micron Technology
Micron Technology

MT28F160A3 Datasheet Preview

MT28F160A3 Datasheet

FLASH MEMORY

No Preview Available !

MT28F160A3 pdf
www.DataSheet4U.com
ADVANCE
1 MEG x 16
ENHANCED BOOT BLOCK FLASH MEMORY
ARCHITECTURE
The MT28F160A3 flash contains eight 4K-word pa-
rameter blocks and thirty-one 32K-word blocks. The first
two 4K-word blocks are called boot blocks and are locked
with WP# control. Memory is organized by using a blocked
architecture to allow independent erasure of selected
memory blocks. Any address within a block address range
selects that block for the required READ, WRITE, or ERASE
operation (see Figures 1 and 2).
Table 1
Cross Reference for Abbreviated
Device Marks1
PART NUMBER
MT28F160A3FD-9 BET
MT28F160A3FD-9 TET
MT28F160A3FD-11 BET
MT28F160A3FD-11 TET
PRODUCT
MARKING
FW310
FW311
FW312
FW313
SAMPLE
MARKING
FX310
FX311
FX312
FX313
NOTE: 1. The mechanical sample marking is FY310.
et4U.com
RP#
CE#
WE#
OE#
A0–A19
DQ0–DQ15
Data Input
Buffer
CSM
FUNCTIONAL BLOCK DIAGRAM
Data
Register
X DEC
Y/Z DEC
DataSheet4U.com
Bank a Blocks
Y/Z Gating/Sensing
ID
Reg.
Status
Reg.
DataShee
WSM
I/O Logic
Program/
Erase Change
Pump Voltage
Switch
Address
Input
Buffer
APS
Control
Address
CNT WSM
Address Latch
Address
Multiplexer
Output
Multiplexer
Data
Comparator
DQ0–DQ15
Output
Buffer
Y/Z DEC
X DEC
Y/Z Gating/Sensing
Bank b Blocks
DataSheet4U.com
1 Meg x 16 Enhanced Boot Block Flash Memory
MT28F160A3_3.p65 – Rev. 3, Pub. 8/01
DataSheet4 U .com
2 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.


Part Number MT28F160A3
Description FLASH MEMORY
Maker Micron Technology
Total Page 28 Pages
PDF Download
MT28F160A3 pdf
Download PDF File


Buy Electronic Components




Related Datasheet

1 MT28F160A3 FLASH MEMORY Micron Technology
Micron Technology
MT28F160A3 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components