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Micron Technology
Micron Technology

MT28F160C3 Datasheet Preview

MT28F160C3 Datasheet

FLASH MEMORY

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MT28F160C3 pdf
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ADVANCE
1 MEG x 16
3V ENHANCED+ BOOT BLOCK FLASH MEMORY
FLASH MEMORY
MT28F160C3
Low Voltage, Extended Temperature
FEATURES
• Thirty-nine erase blocks:
Eight 4K-word parameter blocks
Thirty-one 32K-word main memory blocks
BALL ASSIGNMENT (Top View)
46-Ball FBGA
• VCC, VCCQ and VPP voltages:
2.7V–3.3V VCC
2.7V–3.3V VCCQ*
1.65V–3.3V and 12V VPP
• Address access times:
90ns, 110ns at 2.7V–3.3V
12345678
A
A13 A11
A8
VPP WP# A19
A7
A4
B
A14 A10 WE# RP# A18 A17
A5
A2
• Low power consumption:
C A15 A12 A9
A6 A3 A1
Standby and deep power-down mode < 1µA
(typical ICC)
Automatic power saving feature (APS mode)
• Enhanced WRITE/ERASE SUSPEND (1µs typical)
D A16 DQ14 DQ5 DQ11 DQ2 DQ8 CE# A0
E
VCCQ DQ15 DQ6 DQ12 DQ3 DQ9 DQ0
VSS
• 128-bit OTP area for security purposes
• Industry-standard command set compatibility
F VSS DQ7 DQ13 DQ4 VCC DQ10 DQ1 OE#
• Software/hardware block protection
OPTIONS
DataSheet4U.com
NUMBER
(Ball Down)
• Timing
90ns access
NOTE: See page 3 for Ball Description Table.
-9 See last page for mechanical drawing.
110ns access
-11
DataShee
• Boot Block Starting Address
Top (FFFFFH)
Bottom (00000H)
• Package
46-ball FBGA (6 x 8 ball grid)
• Temperature Range
Commercial (0°C to +70°C)
Extended (-40°C to +85°C)
*Lower VCCQ ranges are available upon request.
Part Number Example:
MT28F160C3FD-11 TET
T
B
FD
None
ET
GENERAL DESCRIPTION
The MT28F160C3 is a nonvolatile, electrically block-
erasable (flash), programmable, read-only memory con-
taining 16,777,216 bits organized as 1,048,576 words (16
bits).
The MT28F160C3 is manufactured on 0.22µm pro-
cess technology in a 48-ball FBGA package. The device
has an I/O supply of 2.7V (MIN). Programming in pro-
duction is accomplished by using high voltage which can
be supplied on a separate line.
The embedded WORD WRITE and BLOCK ERASE
functions are fully automated by an on-chip write state
machine (WSM), which simplifies these operations and
relieves the system processor of secondary tasks. The
WSM status can be monitored by an on-chip status reg-
ister to determine the progress of program/erase tasks.
The device is equipped with 128 bits of one time
programmable (OTP) area. The soft protection feature
for blocks will mark them as read-only by configuring soft
protection registers with command sequences.
Please refer to Micron’s Web site (www.micron.com/
flash) for the latest data sheet.
DEVICE MARKING
Due to the size of the package, Micron’s standard part
number is not printed on the top of each device. Instead,
an abbreviated device mark comprised of a five-digit
alphanumeric code is used. The abbreviated device marks
are cross referenced to Micron part numbers in Table 1.
DataSheet4U.com1 Meg x 16 3V Enhanced+ Boot Block Flash Memory
MT28F160C3_3.p65 – Rev. 3, Pub. 8/01
1
©2001, Micron Technology, Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND
ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET
MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.
DataSheet4 U .com



Micron Technology
Micron Technology

MT28F160C3 Datasheet Preview

MT28F160C3 Datasheet

FLASH MEMORY

No Preview Available !

MT28F160C3 pdf
www.DataSheet4U.com
ADVANCE
1 MEG x 16
3V ENHANCED+ BOOT BLOCK FLASH MEMORY
ARCHITECTURE
The MT28F160C3 flash contains eight 4K-word
parameter blocks and thirty-one 32K-word blocks.
Memory is organized by using a blocked architecture to
allow independent erasure of selected memory blocks.
Any address within a block address range selects that
block for the required READ, WRITE, or ERASE operation
(see Figures 1 and 2).
Table 1
Cross Reference for Abbreviated
Device Marks1
PART NUMBER
MT28F160C3FD-9 BET
MT28F160C3FD-9 TET
MT28F160C3FD-11 BET
MT28F160C3FD-11 TET
PRODUCT
MARKING
FW610
FW611
FW612
FW613
SAMPLE
MARKING
FX610
FX611
FX612
FX613
NOTE: 1. The mechanical sample marking is FY610.
et4U.com
RP#
CE#
WE#
OE#
A0–A19
DQ0–DQ15
Data Input
Buffer
CSM
FUNCTIONAL BLOCK DIAGRAM
Data
Register
X DEC
Y/Z DEC
DataSheet4U.com
Bank a Blocks
Y/Z Gating/Sensing
ID
Reg.
Status
Reg.
DataShee
WSM
I/O Logic
Program/
Erase Change
Pump Voltage
Switch
Address
Input
Buffer
APS
Control
Address
CNT WSM
Address Latch
Address
Multiplexer
Output
Multiplexer
Data
Comparator
DQ0–DQ15
Output
Buffer
Y/Z DEC
X DEC
Y/Z Gating/Sensing
Bank b Blocks
DataSheet4U.com
1 Meg x 16 3V Enhanced+ Boot Block Flash Memory
MT28F160C3_3.p65 – Rev. 3, Pub. 8/01
DataSheet4 U .com
2 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.


Part Number MT28F160C3
Description FLASH MEMORY
Maker Micron Technology
Total Page 28 Pages
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