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Micron Technology
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MT29F1G01AAADD Datasheet Preview

MT29F1G01AAADD Datasheet

1Gb x1: SPI NAND Flash Memory

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MT29F1G01AAADD pdf
Micron Confidential and Proprietary
Advance
1Gb x1: SPI NAND Flash Memory
Features
NAND Flash Memory
Serial Peripheral Interface (SPI)
MT29F1G01AAADD
Features
Single-level cell (SLC) technology
Organization
Page size x1: 2112 bytes (2048 + 64 bytes)
Block size: 64 pages (128K + 4K bytes)
Plane size: 2 planes x 512 blocks per plane
Device size: 1Gb: 1024 blocks
Data retention: 10 years
New commands
PAGE READ in x2 mode
PAGE READ in x4 mode
Options
Density: 1Gb (single die)
Operating temperature
Commercial (0°C to +70°C)
Industrial (–40°C to +85°C)
Package
63-ball VFBGA, lead-free, (9mm x 11mm)
Table 1: NAND Flash SPI Parameters
Parameters
VCC range
Frequency
Transfer rate
Loading throughput
tBERS (BLOCK ERASE)
tPROG (PAGE PROGRAM)
tRD (PAGE READ)
Internal ECC correction
Width
Value
2.7–3.6V
50 MHz
20ns
50 MT/s
4ms (TYP)
400µs (TYP)
100µs (MAX)
4-bit
x1, x2, x4
PDF: 09005aef84011d85
1gb_nand_spi_m68a.pdf – Rev. B 02/11 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by
Micron without notice. Products are only warranted by Micron to meet Micron's production data sheet specifications.



Micron Technology
Micron Technology

MT29F1G01AAADD Datasheet Preview

MT29F1G01AAADD Datasheet

1Gb x1: SPI NAND Flash Memory

No Preview Available !

MT29F1G01AAADD pdf
Micron Confidential and Proprietary
Advance
1Gb x1: SPI NAND Flash Memory
Features
Part Numbering Information
Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by
using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type,
visit www.micron.com/products. Contact the factory for devices not found.
Figure 1: Part Number Chart
MT 29F 1G 01 A A A D D H4 IT ES :D
Micron Technology
Product Family
29F = NAND Flash memory
Density
1G = 1Gb
Device Width
01 = 1-bit
Level
A = SLC
Classification
Mark Die nCE RnB I/O Channels
A1
00
1
Operating Voltage Range
A = 3.3V (2.7–3.6V)
Generation Feature Set
D = Fourth set of device features
Design Revision (shrink)
D = Fourth revision
Production Status
Blank = Production
ES = Engineering sample
Reserved for Future Use
Blank
Operating Temperature Range
IT = Industrial (–40°C to +85°C)
Speed Grade
Blank if no speed grade is defined
Package Code
H4 = 63-ball VFBGA (9mm x 11mm x 1.0mm)
Interface
D = SPI
PDF: 09005aef84011d85
1gb_nand_spi_m68a.pdf – Rev. B 02/11 EN
2 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.


Part Number MT29F1G01AAADD
Description 1Gb x1: SPI NAND Flash Memory
Maker Micron Technology
Total Page 30 Pages
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