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Micron Technology
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MT29F1G08ABBEAHC-IT Datasheet Preview

MT29F1G08ABBEAHC-IT Datasheet

NAND Flash Memory

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MT29F1G08ABBEAHC-IT pdf
Micron Confidential and Proprietary
Preliminary
1Gb x8, x16: NAND Flash Memory
Features
NAND Flash Memory
MT29F1G08ABAEAWP-IT, MT29F1G08ABAEAWP, MT29F1G08ABAEAH4-IT
MT29F1G08ABAEAH4, MT29F1G08ABBEAH4-IT, MT29F1G08ABBEAH4,
MT29F1G16ABBEAH4-IT, MT29F1G16ABBEAH4, MT29F1G08ABBEAHC-IT,
MT29F1G08ABBEAHC, MT29F1G16ABBEAHC-IT, MT29F1G16ABBEAHC
Features
• Open NAND Flash Interface (ONFI) 1.0-compliant1
• Single-level cell (SLC) technology
• Organization
– Page size x8: 2112 bytes (2048 + 64 bytes)
– Page size x16: 1056 words (1024 + 32 words)
– Block size: 64 pages (128K + 4K bytes)
– Device size: 1Gb: 1024 blocks
• Asynchronous I/O performance
tRC/tWC: 20ns (3.3V), 25ns (1.8V)
• Array performance
– Read page: 25µs
– Program page: 200µs (TYP, 3.3V and 1.8V)
– Erase block: 700µs (TYP)
• Command set: ONFI NAND Flash Protocol
• Advanced command set
– Program page cache mode
– Read page cache mode
– One-time programmable (OTP) mode
– Read unique ID
– Internal data move
– Block lock (1.8V only)
• Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
• Internal data move operations supported within the
device from which data is read
• Ready/busy# (R/B#) signal provides a hardware
method for detecting operation completion
• WP# signal: write protect entire device
• First block (block address 00h) is valid when ship-
ped from factory with ECC. For minimum required
ECC, see Error Management.
• Block 0 requires 1-bit ECC if PROGRAM/ERASE cy-
cles are less than 1000
• RESET (FFh) required as first command after pow-
er-on
• Alternate method of device initialization (Nand_In-
it) after power up3 (contact factory)
• Quality and reliability
– Data retention: 10 years
– Endurance: 100,000 PROGRAM/ERASE cycles
• Operating Voltage Range
– VCC: 2.7–3.6V
– VCC: 1.7–1.95V
• Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
• Package
– 48-pin TSOP type 1, CPL2
– 63-ball VFBGA
Notes:
1. The ONFI 1.0 specification is available at
www.onfi.org.
2. CPL = Center parting line.
3. Available only in the 1.8V VFBGA package.
PDF: 09005aef847d5585
m68m_non_ecc.pdf – Rev. E 7/12 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by
Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications.



Micron Technology
Micron Technology

MT29F1G08ABBEAHC-IT Datasheet Preview

MT29F1G08ABBEAHC-IT Datasheet

NAND Flash Memory

No Preview Available !

MT29F1G08ABBEAHC-IT pdf
Micron Confidential and Proprietary
Preliminary
1Gb x8, x16: NAND Flash Memory
Features
Part Numbering Information
Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by
using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type,
visit www.micron.com/products. Contact the factory for devices not found.
Figure 1: Marketing Part Number Chart
MT 29F 1G 08 A B B E A HC xx xx x ES :E
Micron Technology
Product Family
29F = NAND Flash memory
Density
1G = 1Gb
Device Width
08 = 8-bit
16 = 16-bit
Level
A= SLC
Classification
Mark Die nCE RnB I/O Channels
B1
11
1
Operating Voltage Range
A = 3.3V (2.7–3.6V)
B = 1.8V (1.7–1.95V)
Feature Set
E = Feature set E
Design Revision (shrink)
Production Status
Blank = Production
ES = Engineering sample
MS = Mechanical sample
QS = Qualification sample
Reserved for Future Use
Blank
Operating Temperature Range
Blank = Commercial (0°C to +70°C)
IT = Industrial (–40°C to +85°C)
Speed Grade
Blank
Package Code
WP = 48-pin TSOP 1
HC = 63-ball VFBGA (10.5 x 13 x 1.0mm)
H4 = 63-ball VFBGA (9 x 11 x 1.0mm)
Interface
A = Async only
PDF: 09005aef847d5585
m68m_non_ecc.pdf – Rev. E 7/12 EN
2 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.


Part Number MT29F1G08ABBEAHC-IT
Description NAND Flash Memory
Maker Micron Technology
Total Page 30 Pages
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