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Micron Technology
Micron Technology

MT29F4G08BACWP Datasheet Preview

MT29F4G08BACWP Datasheet

NAND Flash Memory

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MT29F4G08BACWP pdf
2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory
Features
NAND Flash Memory
MT29F2G08AACWP, MT29F4G08BACWP, MT29F8G08FACWP
For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets
Features
• Organization
• Page size x8: 2,112 bytes (2,048 + 64 bytes)
• Page size x16: 1,056 words (1,024 + 32 words)
• Block size: 64 pages (128K + 4K bytes)
• Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks;
8Gb: 8,192 blocks
• READ performance
• RANDOM READ: 25µs
• SEQUENTIAL READ: 30ns (3V x8 only)
• WRITE performance
• PROGRAM PAGE: 300µs (TYP)
• BLOCK ERASE: 2ms (TYP)
• Endurance: 100,000 PROGRAM/ERASE cycles
• First block (block address 00h) guaranteed to be
valid without ECC (up to 1,000 PROGRAM/ERASE
cycles)
• VCC: 1.70V–1.95V1 or 2.7V–3.6V
• Automated PROGRAM and ERASE
• Basic NAND Flash command set:
• PAGE READ, READ for INTERNAL DATA MOVE,
RANDOM DATA READ, READ ID, READ STATUS,
PROGRAM PAGE, RANDOM DATA INPUT, PRO-
GRAM PAGE CACHE MODE, PROGRAM for
INTERNALwww.DataSheet4U.net DATA MOVE, BLOCK ERASE, RESET
• New commands:
• PAGE READ CACHE MODE
• One-time programmable (OTP), including:
OTP DATA PROGRAM, OTP DATA PROTECT,
OTP DATA READ
• READ UNIQUE ID (contact factory)
• READ ID2 (contact factory)
• Operation status byte provides a software method of
detecting:
• PROGRAM/ERASE operation completion
• PROGRAM/ERASE pass/fail condition
• Write-protect status
• READY/BUSY (R/B#) pin provides a hardware
method of detecting PROGRAM or ERASE cycle
completion
• PRE pin: prefetch on power up (3V device only)2
• WP# pin: hardware write protect
Figure 1: 48-Pin TSOP Type 1
Options
• Density:
2Gb (single die)
4Gb (dual-die stack)
8Gb (quad-die stack)
• Device width:
x8
x161
• Configuration:
# of die # of CE# # of R/B#
11
21
42
1
1
2
• VCC:
2.7V–3.6V
1.70V–1.95V1
• Third generation die
• Package:
48-Pin TSOP type I (lead-free)
• Operating temperature:
Commercial (0°C to 70°C)
Extended (–40°C to +85°C)3
Marking
MT29F2G
MT29F4G
MT29F8G
MT29Fxx08x
MT29Fxx16x
A
B
F
A
B
C
WP
None
ET
Notes: 1. Packaged parts are only available for 3V x8
devices. For 1.8V or x16 devices, contact
factory.
2. The PRE function is not supported on ET and
1.8V devices. Contact factory.
3. For ET devices, contact factory.
PDF: 09005aef814b01a2 / Source: 09005aef814b01c7
2_4_8gb_nand_m49a__1.fm - Rev. A 3/06 EN
1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2005 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.



Micron Technology
Micron Technology

MT29F4G08BACWP Datasheet Preview

MT29F4G08BACWP Datasheet

NAND Flash Memory

No Preview Available !

MT29F4G08BACWP pdf
2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory
Part Numbering Information
Part Numbering Information
Micron® NAND Flash devices are available in several different configurations and
densities (see Figure 2).
Figure 2: Part Number Chart
MT 29F 2G 08 A A C WP
Micron Technology
Product Family
29F = Single-supply NAND Flash memory
Density
2G = 2Gb
4G = 4Gb
8G = 8Gb
Device Width
08 = 8 bits
16 = 16 bits
Classification
# of die # of CE# # of R/B# I/O
A1
1
1 Common
B2
1
1 Common
F4
1
1 Common
Operating Voltage Range
A = 3.3V (2.70V–3.60V)
B = 1.8V (1.70V–1.95V)
ES :C
Die Revision
C = First generation
Production Status
Blank = Production
ES = Engineering sample
MS = Mechanical sample
QS = Qualification sample
Operating Temperature Range
Blank = Commercial (0°C to +70°C)
ET = Extended (–40°C to +85°C)
Reserved for Future Use
Feature Set
Blank = Standard features
Package Codes
WP = 48-pin TSOP I (lead-free)
Generation
A = First-generation die
B = Second-generation die
C = Third-generation die
Valid Part Number Combinations
www.DataSheet4U.net
After building the part number from the part numbering chart above, verify that the part
number is valid using the Micron Parametric Part Search at: http://www.micron.com/
partsearch.
If the device required is not on this list, contact the factory.
PDF: 09005aef814b01a2 / Source: 09005aef814b01c7
2_4_8gb_nand_m49a__1.fm - Rev. A 3/06 EN
2 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2005 Micron Technology, Inc. All rights reserved.


Part Number MT29F4G08BACWP
Description NAND Flash Memory
Maker Micron Technology
Total Page 30 Pages
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