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Micropac Industries
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61058-101 Datasheet Preview

61058-101 Datasheet

SILICON PHOTOTRANSISTOR

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61058-101 pdf
61058
SILICON PHOTOTRANSISTOR
(TYPE GS4021)
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
Hermetically sealed
High sensitivity
Base lead provided for conventional transistor
biasing
Narrow viewing angle
Spectrally matched to the 62033 series LED.
Applications:
Incremental encoding
Reflective sensors
Position sensors
Level sensors
DESCRIPTION
The 61058 is an N-P-N Planar Silicon phototransistor in a lensed TO-46 three-lead package. It is available in a range of
sensitivities and is ideal for use wherever high response, low dark current leakage, and low saturation characteristics are
required. Available custom binned to customer specifications or screened to MIL-PRF-19500.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature..........................................................................................................................................-65°C to +150°C
Operating Temperature (See part selection guide for actual operating temperature) ......................................-65°C to +125°C
Collector-Emitter Voltage........................................................................................................................................................ 50V
Emitter-Collector Voltage.......................................................................................................................................................... 7V
Continuous Collector Current ..............................................................................................................................................50mA
Power Dissipation (Derate at the rate of 2.5 mW/°C above 25°C) ..................................................................................250mW
Lead Soldering Temperature (1/16” from case for 10 seconds)........................................................................................ 240°C
Package Dimensions
Schematic Diagram
0.210 [5.33]
0.170 [4.32]
0.230Ø [5.84]
0.209Ø [5.31]
0.195Ø [4.95]
0.178Ø [4.52]
0.030 [0.76] MAX
0.019 Ø[0.48]
0.016 Ø[0.41]
0.500 [12.70]
MIN
3 LEADS
COLLECTOR
3 Ø0.100 [Ø2.54]
2
BASE
EMITTER
1
45°
0.048 [1.22]
0.028 [0.71]
0.046 [1.17]
0.036 [0.91]
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]
THE COLLECTOR IS IN ELECTRICAL
CONTACT WITH THE CASE
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com E-MAIL: optosales@micropac.com
6 - 14



Micropac Industries
Micropac Industries

61058-101 Datasheet Preview

61058-101 Datasheet

SILICON PHOTOTRANSISTOR

No Preview Available !

61058-101 pdf
61058
SILICON PHOTOTRANSISTOR (TYPE GS4021)
ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified.
PARAMETER
SYMBOL MIN TYP MAX
Light Current
61058-X01
61058-X02
61058-X03
IL
1
4
8
5
9
16
61058-X04
15 --
Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Light Current Rise Time
61058-XXX
61058-XXX
61058-XXX
61058-X01
ID
BVCEO
BVECO
100
30
7
3.0
61058-X02
4.0
61058-X03
61058-X04
tr
5.0
7.0
Saturation Voltage
61058-XXX
VCE (sat)
0.2
Angular Response
61058-XXX
θ
10
NOTES:
1. Irradiance in mW/cm2 from a tungsten source at a color temperature of 2870K..
2. The angle between incidence for peak response and incidence for 50% of peak response.
UNITS
mA
nA
V
V
µs
V
degrees
TEST CONDITIONS
VCE = 5.0V, H = 5 mW/cm2
VCE = 10V, H = 0
IC = 100µA
IE = 100µA
RL = 1K, VCC = 5V,
IL = 1.0mA
IC = 0.4mA, H = 5 mW/cm2
NOTE
1
2
PULSE RESPONSE TEST
Vcc CIRCUIT AND WAVEFORM
90%
H DUT
IL RL
OUTPUT
10%
tr
tf
ANGULAR RESPONSE
100
80
60
40
20
0
-4 0
-3 0
-20 -10
0 10 20
A N G L E [D E G R E E S ]
30 40
RELATIVE SPECTRAL RESPONSE
100
90
80
70
60
50
40
30
20
10
0
0.2 0.3 0.4
0.5 0.6 0.7 0.8 0.9
1.0 1.1
WAVELENGTH [um]
1.2
COLLECTOR-EMITTER CHARACTERISTICS
10 COLOR TEMP = 2870 k
TUNGSTEN SOURCE
8.0 H =10 m W /cm 2
6.0 5.0
4.0 3.0
2.0
0
0
2.0
1.0
0.5
5 10 15 20
VC E C O L L E C T O R -E M IT T E R V O L T A G E [V O L T S ]
25
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-100
NORMALIZED LIGHT CURRENT
versus TEMPERATURE
Vcc = 5.0 V
NOTE 1
RL =100
-75 -50 -25
0 25 50 75 100 125
TA AMBIENT TEMPERATURE [°C]
150
RECOMMENDED OPERATING CONDITIONS:
PARAMETER
SYMBOL
MIN
MAX
Bias Voltage-Collector/Emitter
IF 5
10
Irradiance (H)
H 15
25
PART NUMBER
61058-001
61058-101
61058-002
61058-102
61058-003
61058-103
61058-004
61058-104
SELECTION GUIDE
PART DESCRIPTION
Silicon Phototransistor in TO-46 package, commercial version
Silicon Phototransistor in TO-46 package (-55° to +125°C) with 100% screening
Silicon Phototransistor in TO-46 package, commercial version
Silicon Phototransistor in TO-46 package (-55° to +125°C) with 100% screening
Silicon Phototransistor in TO-46 package, commercial version
Silicon Phototransistor in TO-46 package (-55° to +125°C) with 100% screening
Silicon Phototransistor in TO-46 package, commercial version
Silicon Phototransistor in TO-46 package (-55° to +125°C) with 100% screening
UNITS
mA
mW/cm2
IL Range
1 to 5mA
1 to 5mA
4 to 9mA
4 to 9mA
8 to 16mA
8 to 16mA
15+ mA
15+ mA
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com E-MAIL: optosales@microopac.com
6 - 15


Part Number 61058-101
Description SILICON PHOTOTRANSISTOR
Maker Micropac Industries
Total Page 2 Pages
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