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1N6658R Datasheet

(1N6657R - 1N6659R) DUAL ULTRAFAST POWER RECTIFIER

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1N6658R pdf
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
DUAL ULTRAFAST POWER RECTIFIER
Qualified per MIL-PRF-19500/616
DEVICES
1N6657
1N6658
1N6659
1N6657R
1N6658R
1N6659R
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) (Per Diode)
Parameters / Test Conditions
Peak Repetitive Reverse Voltage
Average Forward Current (1)
Peak Surge Forward Current
1N6657, R
1N6658, R
1N6659, R
TC = +100°C
Thermal Resistance - Junction to Case
Note:
(1) Derate @ 300mA/°C above TC = 100°C
(2) Pulse Test; 300µS, duty cycle 2%
Symbol
VRWM
IF
IFSM
Rθjc
Value
100
150
200
15
150
2.3
Unit
Vdc
Adc
A(pk)
°C/W
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol Min. Max. Unit
OFF CHARACTERTICS
Breakdown Voltage (2)
IR = 500µAdc
Forward Voltage (2)
IF = 10Adc
IF = 20Adc
Reverse Leakage Current (2)
VR = 100V
VR = 150V
VR = 200V
Reverse Leakage Current
VR = 100V, TC = +100°C
VR = 150V, TC = +100°C
VR = 200V, TC = +100°C
1N6657, R
1N6658, R
1N6659, R
1N6657, R
1N6658, R
1N6659, R
1N6657, R
1N6658, R
1N6659, R
100
VBR 150
200
Vdc
VF1
VF2
1.0
1.2
Vdc
IR1 10 µAdc
IR2 1.0 mAdc
Reverse Recovery Time
IF = 1.0A, IR = 1A, IRR = 100mA
Junction Capacitance
VR = 10Vdc, f = 1.0MHz, VSIG = 50mV(p-p) max
trr
CJ
35 nS
150 pF
TO-254
1 2 3
1N6657, 1N6658, 1N6659
1 2 3
1N6657R, 1N6658R, 1N6659R
T4-LDS-0068 Rev. 1 (082207)
Page 1 of 1
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Part Number 1N6658R
Description (1N6657R - 1N6659R) DUAL ULTRAFAST POWER RECTIFIER
Maker Microsemi
Total Page 1 Pages
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