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APT150DL60B2 Datasheet

Ultrasoft Recovery Rectifer Diode

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APT150DL60B2 pdf
Ultrasoft Recovery Rectier Diode
APT150DL60B2(G)
600V 150A
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
PRODUCT APPLICATIONS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Applications
- Induction Heating
• Resonant Mode Circuits
-ZVS and ZCS Topologies
- Phase Shifted Bridge
PRODUCT FEATURES
• Ultrasoft Recovery Times (trr)
• Popular TO-247 Package or
Surface Mount D3PAK Package
PRODUCT BENEFITS
• Soft Switching - High Qrr
• Low Noise Switching
- Reduced Ringing
• Ultra Low Forward Voltage
• Higher Reliability Systems
• Low Leakage Current
• Minimizes or eliminates
snubber
(B2)
T-Max ®
1
2
1
2
1 - Cathode
2 - Anode
Back of Case - Cathode
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specied.
Symbol Characteristic / Test Conditions
Ratings
Unit
VR
VRRM
VRWM
IF(AV)
IF(RMS)
IFSM
TJ, TSTG
TL
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward current 1 (TC = 112°C, Duty Cycle = 0.5)
RMS Forward Currrent (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms)
Operating and Storage Junction Temperature Range
Lead Temperature for 10 Seconds
600
150
450
600
-55 to 175
300
Volts
Amps
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
VF Forward Voltage
IRM Maximum Reverse Leakage Current
CT Junction Capacitance, VR = 200V
IF = 150A
IF = 300A
IF = 150A, TJ = 125°C
VR = 600V
VR = 600V, TJ = 125°C
Min Typ Max Unit
1.25 1.6
2.0 Volts
1.25
25
μA
250
139 pF
Microsemi Website - http://www.microsemi.com
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  Microsemi Electronic Components Datasheet  

APT150DL60B2 Datasheet

Ultrasoft Recovery Rectifer Diode

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APT150DL60B2 pdf
DYNAMIC CHARACTERISTICS
Symbol Characteristic / Test Conditions
trr
Reverse Recovery Time
IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Maximum Reverse Recovery Current
IF = 150A, diF/dt = -200A/μs
VR = 400V, TC = 25°C
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Maximum Reverse Recovery Current
IF = 150A, diF/dt = -200A/μs
VR = 400V, TC = 125°C
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Maximum Reverse Recovery Current
IF = 150A, diF/dt = -1000A/
μs VR = 400V, TC = 125°C
Min
APT150DL60B2(G)
Typ Max Unit
51
ns
408
2387
nC
13 Amps
639 ns
7253
nC
21 Amps
299 ns
12075
nC
68 Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
Min Typ Max Unit
RθJC
WT
Junction-to-Case Thermal Resistance
Package Weight
Torque Maximum Mounting Torque
0.26 °C/W
0.22 oz
5.9 g
10 lb·in
1.1 N·m
1 Continuous current limited by package lead temperature.
Microsemi reserves the right to change, without notice, the specications and information contained herein.
0.30
0.25
0.20
0.15
0.10
Note:
t1
0.05
0
10-5
10-4
10-3
10-2
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Dissipated Power
(Watts)
TJ (°C)
0.099
TC (°C)
0.160
0.0160
0.380
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
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Part Number APT150DL60B2
Description Ultrasoft Recovery Rectifer Diode
Maker Microsemi
Total Page 4 Pages
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