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APT150GN60B2 Datasheet

IGBT

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APT150GN60B2 pdf
TYPICAL PERFORMANCE CURVES
APT16500G0NV60B2(G)
APT150GN60B2(G)
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive VCE(ON) temperature coefcient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplies gate drive design and minimizes losses.
600V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• Intergrated Gate Resistor: Low EMI, High Reliability
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
C
G
E
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specied.
Symbol Parameter
APT150GN60J
UNIT
VCES
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C 1
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 2
Switching Safe Operating Area @ TJ = 175°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±30
220
123
450
450A @ 600V
536
-55 to 175
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
RG(int)
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA)
Gate Threshold Voltage (VCE = VGE, I C = 2400μA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 150A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 150A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 3
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 3
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
MIN
600
5.0
1.05
TYP
5.8
1.45
1.65
2
MAX
6.5
1.85
25
1000
600
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Units
Volts
μA
nA
Ω
Microsemi Website - http://www.microsemi.com
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  Microsemi Electronic Components Datasheet  

APT150GN60B2 Datasheet

IGBT

No Preview Available !

APT150GN60B2 pdf
DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 4
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
SSOA
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 5
Turn-on Switching Energy (Diode) 6
Turn-off Switching Energy 7
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 5 4
Turn-on Switching Energy (Diode) 65
Turn-off Switching Energy 67
Test Conditions
MIN
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 300V
IC = 150A
TJ = 175°C, RG = 4.3Ω 8, VGE =
15V, L = 100μH,VCE = 600V
Inductive Switching (25°C)
VCC = 400V
VGE = 15V
IC = 150A
RG = 1.0Ω 8
TJ = +25°C
450
Inductive Switching (125°C)
VCC = 400V
VGE = 15V
IC = 150A
RG = 1.0Ω 8
TJ = +125°C
APT150GN60B2(G)
TYP
9200
350
300
9.5
970
65
510
MAX
UNIT
pF
V
nC
44
110
430
60
8810
8615
4295
44
110
480
95
8880
9735
5460
A
ns
μJ
ns
μJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
RθJC
RθJC
VIsolation
Junction to Case (IGBT)
Junction to Case (DIODE)
RMS Voltage (50-60Hz Sinsoidal Waveform from Terminals to Mounting Base for 1 Min.)
WT Package Weight
Min Typ Max Unit
- - 0.28 °C/W
- - N/A
2500
- 6.1 - gm
1 Continuous current limited by case temperature.
2 Repetitive Rating: Pulse width limited by maximum junction temperature.
3 For Combi devices, Ices includes both IGBT and FRED leakages
4 See MIL-STD-750 Method 3471.
5
aEdond1inisg
the clamped inductive turn-on energy of the IGBT only, without the effect
to the IGBT turn-on loss. Tested in inductive switching test circuit shown
of
in
a commutating diode reverse recovery current
gure 21, but with a Silicon Carbide diode.
6
lEoosns2.
is the
(See
clamped inductive
Figures 21, 22.)
turn-on
energy
that
includes
a
commutating
diode
reverse
recovery
current
in
the
IGBT
turn-on
switching
7 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
8 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
Microsemi Reserves the right to change, without notice, the specications and information contained herein.
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Part Number APT150GN60B2
Description IGBT
Maker Microsemi
Total Page 6 Pages
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