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  Microsemi Electronic Components Datasheet  

APT15F50KF Datasheet

N-Channel FREDFET

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APT15F50KF pdf
APT15F50K_KF
500V, 15A, 0.39Ω Max, trr 190ns
N-Channel FREDFET
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
APT15F50KF
APT15F50K
G
Single die FREDFET
D
S
FEATURES
• Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
Absolute Maximum Ratings
Symbol Parameter
ID Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage 2
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol
PD
RθJC
RθJC
RθCS
TJ,TSTG
TL
Parameter
Power Dissipation (TC = 25°C) [K]
Power Dissipation (TC = 25°C) [KF]
Junction to Case Thermal Resistance [K]
Junction to Case Thermal Resistance [KF]
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
Soldering Temperature for 10 Seconds (1.6mm from case)
WT Package Weight
Torque Mounting Torque ( TO-220 Package), 4-40 or M3 screw
15F50K 15F50KF
15 6.2
10 3.9
45 18.6
±30
305
7
Unit
A
V
mJ
A
Min
-55
Typ
0.11
0.07
1.2
Max
223
37
0.56
3.3
150
300
10
1.1
Unit
W
°C/W
°C
oz
g
in·lbf
N·m
Microsemi Website - http://www.microsemi.com


  Microsemi Electronic Components Datasheet  

APT15F50KF Datasheet

N-Channel FREDFET

No Preview Available !

APT15F50KF pdf
Static Characteristics
TJ = 25°C unless otherwise specied
Symbol Parameter
Test Conditions
Min
VBR(DSS)
VBR(DSS)/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefcient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefcient
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 250μA
VGS = 10V, ID = 7A
VGS = VDS, ID = 0.5mA
500
2.5
IDSS Zero Gate Voltage Drain Current
VDS = 500V
VGS = 0V
TJ = 25°C
TJ = 125°C
IGSS Gate-Source Leakage Current
VGS = ±30V
Dynamic Characteristics
TJ = 25°C unless otherwise specied
Symbol Parameter
Test Conditions
Min
gfs Forward Transconductance
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
VDS = 50V, ID = 7A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr) 4
Co(er) 5
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
VGS = 0V, VDS = 0V to 333V
APT15F50K_KF
Typ Max Unit
V
0.60 V/°C
0.33 0.39
Ω
45V
-10 mV/°C
250
1000
μA
±100 nA
Typ Max Unit
11 S
2250
30
240
140 pF
70
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Source-Drain Diode Characteristics
Symbol
Parameter
Continuous Source Current
K
IS (Body Diode)
KF
Pulsed Source Current
ISM (Body Diode) 1
K
KF
VGS = 0 to 10V, ID = 7A,
VDS = 250V
Resistive Switching
VDD = 333V, ID = 7A
RG = 10Ω 6 , VGG = 15V
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
G
D
S
55
13 nC
26
10
12 ns
26
8
Min Typ Max Unit
15
6.2
A
45
18.6
VSD
trr
Qrr
Irrm
dv/dt
Diode Forward Voltage 3
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
ISD = 7A, TJ = 25°C, VGS = 0V
TJ = 25°C
ISD = 7A 3
VDD = 100V
diSD/dt = 100A/μs
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
ISD 7A, di/dt 1000A/μs, VDD = 333V,
TJ = 125°C
1.0
190
340
0.54
1.27
5.9
7.9
20
V
ns
μC
A
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 12.45mH, RG = 25Ω, IAS = 7A.
3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
4 Co(cr) is dened as a xed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is dened as a xed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -5.22E-8/VDS^2 + 1.21E-8/VDS + 3.48E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specications and information contained herein.


Part Number APT15F50KF
Description N-Channel FREDFET
Maker Microsemi
Total Page 4 Pages
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