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APT20M45BVRG Datasheet

POWER MOS V

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APT20M45BVRG pdf
APT20M45BVR(G)
200V, 56A, 0.045Ω
POWER MOS V®
POWER MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect, increase
packing density and reduces the on-resistance. Power MOS V® also achieves
faster switching speeds through optimized gate layout.
APT20M45BVR(G)
TO-247
D3
FEATURES
• Faster switching
• Lower Leakage
• 100% Avalanche tested
• Popular TO-247 Package
• RoHS compliant
D
G
S
Absolute Maximum Ratings
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specied.
Ratings
Unit
VDSS
ID
IDM
VGS
VGSM
PD
Drain Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
200 Volts
56
Amps
224
±30
Volts
±40
300 Watts
2.4 W/C°
TJ, TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
Avalanche Current 1 (Repetitive and Non-Repatitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
-55 to 150
300
56
30
1300
°C
Amps
mJ
Static Characteristics
TJ = 25°C unless otherwise specied
Symbol Parameter
Min
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 I )D[Cont.]
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Collector Current (VGS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
200
56
2
Typ Max
0.045
25
250
±100
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Unit
Volts
Amps
Ohms
μA
nA
Volts
Microsemi Website - http://www.microsemi.com


  Microsemi Electronic Components Datasheet  

APT20M45BVRG Datasheet

POWER MOS V

No Preview Available !

APT20M45BVRG pdf
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Qge
Qgd
td(on)
tr
td(off)
tf
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 1
Gate-Source Charge
Gate- Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VDD= 0.5VDSS
ID = I @D[cont.] 25°C
VGS = 10V
VDD= 0.5VDSS
ID = I @D[cont.] 25°C
RG = 1.6Ω
APT20M45BVR(G)
Min Typ Max Unit
4050 4860
980 1375
300 450
pF
130 195
30 45
nC
55 80
12 24
14 28
ns
43 70
7 14
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr)
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulse Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS= -ID[Cont.])
Reverse Recovery Time (IS = -ID[Cont.], dIS/dt = 100A/μs)
Reverse Recovery Time (IS = -ID[Cont.], dIS/dt = 100A/μs)
Min Typ Max Unit
56 Amps
224
1.3 Volts
280 nS
3.5 μC
Thermal Characteristics
Symbol
RθJC
RθJA
Characteristic
Junction to Case
Junction to Ambient
Min Typ Max Unit
0.42
C °/W
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 830μH, RG = 25Ω, Peak IL = 56A
Microsemi Reserves the right to change, without notice, the specications and information contained herein.


Part Number APT20M45BVRG
Description POWER MOS V
Maker Microsemi
Total Page 4 Pages
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