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  Microsemi Electronic Components Datasheet  

APT22F100J Datasheet

N-Channel FREDFET

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APT22F100J pdf
APT22F100J
1000V, 23A, 0.38Ω Max, trr 300ns
N-Channel FREDFET
SS
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
G D SOT-227
ISOTOP®
"UL Recognized"
file # E145592
APT22F100J
D
Single die FREDFET G
S
www.DataSheet4U.com
FEATURES
TYPICAL APPLICATIONS
• Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
RθCS
TJ,TSTG
VIsolation
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
WT Package Weight
Torque Terminals and Mounting Screws.
Ratings
23
15
140
±30
2165
18
Unit
A
V
mJ
A
Min
-55
2500
Typ Max Unit
545 W
0.23
°C/W
0.11
150 °C
V
1.03 oz
29.2 g
10 in·lbf
1.1 N·m
Microsemi Website - http://www.microsemi.com


  Microsemi Electronic Components Datasheet  

APT22F100J Datasheet

N-Channel FREDFET

No Preview Available !

APT22F100J pdf
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min
VBR(DSS)
ΔVBR(DSS)/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)/ΔTJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 250µA
VGS = 10V, ID = 18A
VGS = VDS, ID = 2.5mA
1000
2.5
IDSS Zero Gate Voltage Drain Current
VDS = 1000V
VGS = 0V
TJ = 25°C
TJ = 125°C
IGSS Gate-Source Leakage Current
VGS = ±30V
APT22F100J
Typ Max Unit
V
1.15 V/°C
0.32 0.38
Ω
45V
-10 mV/°C
250
1000
µA
±100 nA
Dynamic Characteristics
Symbol Parameter
gfs Forward Transconductance
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
www.DataSCheoses t4U.coOmutput Capacitance
TJ = 25°C unless otherwise specified
Test Conditions
Min
VDS = 50V, ID = 18A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr) 4
Co(er) 5
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
VGS = 0V, VDS = 0V to 667V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
VGS = 0 to 10V, ID = 18A,
VDS = 500V
Resistive Switching
VDD = 667V, ID = 18A
RG = 2.2Ω 6 , VGG = 15V
Typ
39
9835
130
825
335
170
305
55
145
44
40
150
38
Max
Unit
S
pF
nC
ns
Source-Drain Diode Characteristics
Symbol Parameter
Test Conditions
Min Typ Max Unit
IS
ISM
VSD
trr
Qrr
Irrm
dv/dt
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
D
G
S
ISD = 18A, TJ = 25°C, VGS = 0V
TJ = 25°C
ISD = 18A 3
TJ = 125°C
TJ = 25°C
VDD = 100V
diSD/dt = 100A/µs
TJ = 125°C
TJ = 25°C
TJ = 125°C
ISD 18A, di/dt 1000A/µs, VDD = 667V,
TJ = 125°C
23
A
140
1.1
300
650
1.61
4.21
11.6
15.8
V
ns
µC
A
25 V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 13.36mH, RG = 25Ω, IAS = 18A.
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -2.85E-7/VDS^2 + 5.04E-8/VDS + 9.75E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.


Part Number APT22F100J
Description N-Channel FREDFET
Maker Microsemi
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