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  Microsemi Electronic Components Datasheet  

APT2X151DL60J Datasheet

Ultrafast Soft Recovery Dual Rectifier Diode

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APT2X151DL60J pdf
23
23
14
Anti-Parallel
APT2X150DL60J
14
Parallel
APT2X151DL60J
APT2X151DL60J
APT2X150DL60J
600V 150A
Ultrafast Soft Recovery Dual Rectier Diode
PRODUCT APPLICATIONS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
PRODUCT FEATURES
PRODUCT BENEFITS
• Ultrafast Recovery Times (trr) • Low Losses
• Soft Recoverery Characteristics • Low Noise Switching
• Free Wheeling Diode
- Motor Controllers
- Converters
• Low Forward Voltage
• Low Forward Voltage
• Cooler Operation
• Higher Reliability Systems
• Snubber Diode
• Uninterruptible Power Supply
• Induction Heating
• High Speed Rectiers
• High Blocking Voltage
• Low Leakage Current
• Increased System Power
Density
23
1 4 SOT-227
ISOTOP
"UL Recongnized"
file # 145592
MAXIMUM RATINGS
All Ratings per Diode: TC = 25°C unless otherwise specied.
Symbol Characteristic / Test Conditions
Ratings
Unit
VR
VRRM
VRWM
IF(AV)
IF(RMS)
IFSM
TJ, TSTG
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward current (TC = 40°C, Duty Cycle = 0.5)
RMS Forward Currrent (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms)
Operating and Storage Junction Temperature Range
600
150
165
1000
-55 to 175
Volts
Amps
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
VF Forward Voltage
IRM Maximum Reverse Leakage Current
CT Junction Capacitance, VR = 200V
1 Continuous current limited by package lead temperature.
IF = 150A
IF = 300A
IF = 150A, TJ = 125°C
VR = 600V
VR = 600V, TJ = 125°C
Min Typ Max Unit
1.25 1.6
2.0 Volts
1.25
25
μA
250
139 pF
Microsemi Website - http://www.microsemi.com


  Microsemi Electronic Components Datasheet  

APT2X151DL60J Datasheet

Ultrafast Soft Recovery Dual Rectifier Diode

No Preview Available !

APT2X151DL60J pdf
DYNAMIC CHARACTERISTICS
Symbol Characteristic / Test Conditions
trr
Reverse Recovery Time
IF = 1A, diF/dt = -15A/μs, VR = 30V, TJ = 25°C
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Maximum Reverse Recovery Current
IF = 150A, diF/dt = -200A/μs
VR = 400V, TC = 25°C
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Maximum Reverse Recovery Current
IF = 150A, diF/dt = -200A/μs
VR = 400V, TC = 125°C
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Maximum Reverse Recovery Current
IF = 150A, diF/dt = -1000A/
μs VR = 400V, TC = 125°C
Min
APT2X151_150DL60J
Typ Max Unit
51
ns
408
2387
nC
13 Amps
639 ns
7253
nC
21 Amps
299 ns
12075
nC
68 Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
RθJC
VIsolation
Junction-to-Case Thermal Resistance
RMS Voltage (50-60mHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
WT Package Weight
Min
2500
Torque Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the specications and information contained herein.
0.6
Typ
1.03
29.2
Max
0.56
Unit
°C/W
oz
g
10 lb·in
1.1 N·m
0.5
0.4
0.3
Note:
0.2 t1
0.1
0
10-5
10-4
10-3
10-2
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-1 1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION


Part Number APT2X151DL60J
Description Ultrafast Soft Recovery Dual Rectifier Diode
Maker Microsemi
Total Page 4 Pages
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