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  Microsemi Electronic Components Datasheet  

1N5802US Datasheet

(1N5802US - 1N5806US) SURFACE MOUNT VOIDLESSHERMETICALLY- SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS

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SCOTTSDALE DIVISION
1N5802US thru 1N5806US
SURFACE MOUNT VOIDLESS-
HERMETICALLY-SEALED ULTRA FAST
RECOVERY GLASS RECTIFIERS
DESCRIPTION
APPEARANCE
This “Ultrafast Recovery” surface mount rectifier diode series is military qualified to MIL-
PRF-19500/477 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 2.5 Amp rated rectifiers for working peak reverse
voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction
using an internal “Category I” metallurgical bond. They are also available in axial-
leaded package configurations for thru-hole mounting (see separate data sheet for
1N5802 thru 1N5806). Microsemi also offers numerous other rectifier products to meet
higher and lower current ratings with various recovery time speed requirements
including standard, fast and ultrafast device types in both through-hole and surface
mount packages.
Package “A”
or D-5A
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Surface mount package series equivalent to the JEDEC
registered 1N5802 to 1N5806 series
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category I” Metallurgical bonds
JAN, JANTX, JANTXV, and JANS available per MIL-PRF-
19500/477
Axial-leaded equivalents available (see 1N5802 thru 1N5806)
MAXIMUM RATINGS
Junction Temperature: -65oC to +175oC
Storage Temperature: -65oC to +175oC
Average Rectified Forward Current (IO): 2.5 A @ TEC = 75ºC
Thermal Resistance: 20 ºC/W junction to end cap
Thermal Impedance: 4.5oC/W @ 10 ms heating time
Forward Surge Current: 35 Amps @ 8.3 ms half-sine
Capacitance: 25 pF @ VR = 10 Volts, f = 1 MHz
Solder temperature: 260ºC for 10 s (maximum)
Ultrafast recovery 2.5 Amp rectifier series 50 to 150 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward loss
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Microsemi
MicroNote 050
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass with
Tungsten slugs
TERMINALS: End caps are Copper with Tin/Lead
(Sn/Pb) finish. Note: Previous inventory had solid
Silver end caps with Tin/Lead (Sn/Pb) finish.
MARKING and POLARITY: Cathode band only
Tape & Reel option: Standard per EIA-481-B
Weight: 193 mg
See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
WORKING BREAKDOWN AVERAGE AVERAGE MAXIMUM
REVERSE
SURGE
PEAK
VOLTAGE RECTIFIED RECTIFIED FORWARD
CURRENT CURRENT
TYPE
REVERSE
VOLTAGE
VRWM
(MIN.)
@ 100μA
VBR
CURRENT
IO1 @
TEC=+75ºC
(NOTE 1)
CURRENT
IO2 @
TA=+55ºC
(Note 2)
VOLTAGE
@1A
(8.3 ms pulse)
VF
(MAX)
@ VRWM
IR
(MAX)
IFSM
(NOTE 3)
VOLTS
VOLTS
AMPS
AMPS
VOLTS
μA
25oC 100oC 25oC 100oC
AMPS
1N5802US
50
55
2.5
1.0
0.875 0.800 1
50
35
1N5803US
75
80
2.5 1.0
1 50
35
1N5804US 100
110
2.5
1.0
0.875 0.800 1
50
35
1N5805US 125
135
2.5 1.0
1 50
35
1N5806US 150
160
2.5
1.0
0.875 0.800 1
50
35
NOTE 1: IO1 is rated at 2.5 A @ TEC = 75º. Derate at 50 mA/ºC for TEC above 125ºC.
NOTE 2: IO2 is rated at 1.0 A @ TA = 55ºC for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where TJ(max) does not exceed 175ºC. Derate at 8.33 mA/ºC for TA above 55ºC.
NOTE 3: TA = 25oC @ IO = 1.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals
NOTE 4: IF = 0.5 A, IRM = 0.5 A, IR(REC) = .05 A
Copyright © 2007
1-15-2007 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
trr
ns
25
25
25
25
25
Page 1


  Microsemi Electronic Components Datasheet  

1N5802US Datasheet

(1N5802US - 1N5806US) SURFACE MOUNT VOIDLESSHERMETICALLY- SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS

No Preview Available !

1N5802US pdf
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SCOTTSDALE DIVISION
1N5802US thru 1N5806US
SURFACE MOUNT VOIDLESS-
HERMETICALLY-SEALED ULTRA FAST
RECOVERY GLASS RECTIFIERS
Symbol
VBR
VRWM
IO
VF
IR
C
trr
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature
range
Average Rectified Output Current: Output Current Averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing
from the forward direction to the reverse direction and a specified recovery decay point after a peak reverse
current occurs.
PACKAGE DIMENSIONS AND PAD LAYOUT
NOTE: This Package Outline has also previously
been identified as “D-5A”
BD
BL
ECT
S
INCHES
MIN MAX
.097 .103
.185 .200
.019 .028
.003 ---
mm
MIN MAX
2.46 2.62
4.70 5.08
0.48 0.71
0.08 ---
PAD LAYOUT
INCHES
mm
A 0.246
B 0.067
6.25
1.70
C 0.105
2.67
Note: If mounting requires adhesive
separate from the solder, an additional
0.060 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.
Copyright © 2007
1-15-2007 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2


Part Number 1N5802US
Description (1N5802US - 1N5806US) SURFACE MOUNT VOIDLESSHERMETICALLY- SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS
Maker Microsemi Corporation
Total Page 2 Pages
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