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  Microsemi Electronic Components Datasheet  

APT100GF60JU2 Datasheet

Boost chopper NPT IGBT

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APT100GF60JU2 pdf
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ISOTOP® Boost chopper
NPT IGBT
K
C
G
E
E
G
K
C
ISOTOP
VCES = 600V
IC = 100A @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
Non Punch Through (NPT) THUNDERBOLT IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
ISOTOP® Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC1
IC2
Continuous Collector Current
ICM Pulsed Collector Current
VGE Gate – Emitter Voltage
PD Maximum Power Dissipation
IFAV Maximum Average Forward Current
Duty cycle=0.5
IFRMS RMS Forward Current (Square wave, 50% duty)
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
TC = 80°C
Max ratings
600
120
100
320
±20
416
30
39
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Unit
V
A
V
W
A
www.microsemi.com
1-9


  Microsemi Electronic Components Datasheet  

APT100GF60JU2 Datasheet

Boost chopper NPT IGBT

No Preview Available !

APT100GF60JU2 pdf
APT100GF60JU2www.DataSheet4U.com
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
ICES Zero Gate Voltage Collector Current
VCE(sat)
VGE(th)
IGES
Collector Emitter saturation Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, IC = 100µA
VGE = 0V
Tj = 25°C
VCE = 600V
Tj = 125°C
600
100
1000
V
µA
VGE =15V
IC = 100A
Tj = 25°C
Tj = 125°C
2.0 2.5
2.2
V
VGE = VCE, IC = 1mA
3
5V
VGE = ±20V, VCE = 0V
±150 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Td(off) Turn-off Delay Time
Tf
Eon
Eoff
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Fall Time
Turn-on Switching Energy
Turn off Switching Energy
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
VGS = 15V
VBus = 300V
IC = 100A
Resistive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 100A
RG = 5
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 100A
RG = 5
Min Typ Max Unit
4300
470
400
pF
330
290 nC
200
26
25 ns
150
30
3.35 mJ
2.85
26
25
170
ns
40
4.3 mJ
3.5
www.microsemi.com
2-9


Part Number APT100GF60JU2
Description Boost chopper NPT IGBT
Maker Microsemi Corporation
Total Page 9 Pages
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APT100GF60JU2 pdf
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