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APT200GN60B2G Datasheet

Field Stop IGBT

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APT200GN60B2G pdf
APT2w0ww0.DGatNaSh6ee0t4BU.c2omG
600V, VCE(ON) = 1.45V Typical
Field Stop IGBT
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT’s have ultra low VCE(ON) and
are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling
is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefcient. A
built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low
gate charge simplies gate drive design and minimizes losses.
• 1200V Field Stop
• Trench Gate: Low VCE(ON)
• Easy Paralleling
• Integrated Gate Resistor :Low EMI, High Reliability
• RoHS Compliant
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
Maximum Ratings
All Ratings: TC = 25°C unless otherwise specied.
Symbol Parameter
Ratings
Unit
VCES
VGE
IC1
IC2
ICM
SSOA
PD
TJ, TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 175°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063” from Case for 10 Sec.
600
±20
283
158
600
600A @ 600V
682
-55 to 175
300
Volts
Amps
Watts
°C
Static Electrical Characteristics
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
ICES
IGES
RG(int)
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA)
Gate Threshold Voltage (VCE = VGE, IC = 3.2mA, Tj = 25°C)
Collector Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 25°C)
Collector Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Integrated Gate Resistor
Min Typ Max
600 -
-
5.0 5.8 6.5
1.05 1.45 1.85
- 1.65 -
- - 25
- - 1000
- - 600
-2-
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Unit
Volts
μA
nA
Ω
Microsemi Website - http://www.microsemi.com


  Microsemi Electronic Components Datasheet  

APT200GN60B2G Datasheet

Field Stop IGBT

No Preview Available !

APT200GN60B2G pdf
Dynamic Characteristics
APT200GN60B2G
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
SSOA Switching Safe Operating Area
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy 4
Turn-On Switching Energy 5
Turn-Off Switching Energy 6
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy 4
Turn-On Switching Energy 5
Turn-Off Switching Energy 6
Test Conditions
VGE = 0V, VCE = 25V
f = 1MHz
Min Tywpww.DaMtaaSxheet4UU.cnoimt
- 14100
-
- 461
-
pF
- 393
-
Gate Charge
VGE = 15V
VCE= 300V
IC = 100A
- 8.2
- 1180
- 85
- 660
-
-
-
-
V
nC
TJ = 150°C, RG = 1.0Ω 7, VGE = 15V,
L = 100μH, VCE= 600V
600
-
50
-
A
Inductive Switching (25°C)
VCC = 400V
VGE = 15V
IC = 200A
RG = 1.0Ω
TJ = +25°C
- 80
- 560
- 100
- 13
- 15
- 11
-
-
-
-
-
-
ns
mJ
- 50
-
Inductive Switching (125°C)
VCC = 400V
VGE = 15V
IC = 200A
RG = 1.0Ω
TJ = +125°C
- 80
- 620
- 70
- 14
- 16
- 10
-
-
-
-
-
-
ns
mJ
Thermal and Mechanical Characteristics
Symbol Characteristic / Test Conditions
Min Typ Max Unit
RθJC Junction to Case (IGBT)
- - 0.13 °C/W
RθJC Junction to Case (DIODE)
- - N/A
WT Package Weight
- 6.1 - gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4
tEhoen1IGisBthTetucrlanm-opneldosinsd. uTcetsivteedtuinrni-nodnuecntievergsywoiftcthheinIgGtBeTstocnirlyc,uwitisthhoouwt nthien
effect of a
gure 21,
commutating diode reverse recovery
but with a Silicon Carbide diode.
current
adding to
5
lEoosns2.
is the
(See
clamped inductive
Figures 21, 22.)
turn-on
energy
that
includes
a
commutating
diode
reverse
recovery
current
in
the
IGBT
turn-on
switching
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance not including gate driver impedance.
Microsemi reserves the right to change, without notice, the specications and information contained herein.


Part Number APT200GN60B2G
Description Field Stop IGBT
Maker Microsemi Corporation
Total Page 6 Pages
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