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  Microsemi Electronic Components Datasheet  

APT200GT60JRDQ4 Datasheet

Thunderbolt IGBT

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APT200GT60JRDQ4 pdf
APT200wGwwT.D6at0aSJheRet4DU.cQom4
600V, 200A, VCE(ON) = 2.0V Typical
Thunderbolt IGBT®
The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using
Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior rugged-
ness and ultrafast switching speed.
Features
• Low Forward Voltage Drop
• Low Tail Current
• Integrated Gate Resistor
Low EMI, High Reliability
• RoHS Compliant
• RBSOA and SCSOA Rated
• High Frequency Switching to 50KHz
• Ultra Low Leakage Current
EE
G C SOT-227
ISOTOP®
"UL Recognized"
file # E145592
Maximum Ratings
Symbol Parameter
VCES
VGE
Collector-Emitter Voltage
Gate-Emitter Voltage
IC1 Continuous Collector Current @ TC = 25°C
IC2
ICM
SSOA
PD
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
TJ, TSTG Operating and Storage Junction Temperature Range
All Ratings: TC = 25°C unless otherwise specied.
Ratings
Unit
600
Volts
±30
195
100 Amps
600
600A @ 600V
595
Watts
-55 to 150
°C
Static Electrical Characteristics
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
ICES
IGES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1.0mA)
Gate Threshold Voltage (VCE = VGE, IC = 4.0mA, Tj = 25°C)
Collector Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 25°C)
Collector Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±30V)
Min Typ Max Unit
600 -
-
345
Volts
1.6 2.0 2.5
- 2.5 -
- - 50
μA
- - 1500
- - 600 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com


  Microsemi Electronic Components Datasheet  

APT200GT60JRDQ4 Datasheet

Thunderbolt IGBT

No Preview Available !

APT200GT60JRDQ4 pdf
Dynamic Characteristic
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector Charge
SSOA Switching Safe Operating Area
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy 4
Turn-On Switching Energy 5
Turn-Off Switching Energy 6
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy 4
Turn-On Switching Energy 5
Turn-Off Switching Energy 6
Thermal and Mechanical Characteristics
Symbol Characteristic / Test Conditions
RθJC Junction to Case (IGBT)
RθJC Junction to Case (DIODE)
WT Package Weight
Torque Terminals and Mounting Screws
Test Conditions
VGE = 0V, VCE = 25V
f = 1MHz
Gate Charge
VGE = 15V
VCE= 300V
IC = 200A
TJ = 150°C, RG = 2.2Ω , VGE = 15V,
L = 100μH, VCE= 600V
Inductive Switching (25°C)
VCC = 400V
VGE = 15V
IC = 200A
RG = 2.2Ω
TJ = +25°C
Inductive Switching (125°C)
VCC = 400V
VGE = 15V
IC = 200A
RG = 2.2Ω
TJ = +125°C
VIsolation RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
APT200GT60JRDQ4
Min Tywpww.DaMtaaSxheet4UU.cnoimt
- 8650
-
- 546
-
pF
- 1180
-
- 7.5
-
V
- 946
-
- 58 - nC
- 430
-
600 A
- 72
- 160
- 952
- 212
--
- 9193
- 19290
- 71
- 157
- 1030
- 202
--
- 10460
- 20210
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
μJ
ns
μJ
Min Typ Max Unit
- - 0.21
°C/W
- - 0.48
- 29.2
-
g
- - 10 in·lbf
- - 1.1 N·m
2500
-
- Volts
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages.
3 See MIL-STD-750 Method 3471.
4
zEoan1thise
the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating
IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a
diode reverse recovery
Silicon Carbide diode.
current
adding to
5
lEoosns2.
is the
(See
clamped inductive
Figures 21, 22.)
turn-on
energy
that
includes
a
commutating
diode
reverse
recovery
current
in
the
IGBT
turn-on
switching
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance not including gate driver impedance.
Microsemi reserves the right to change, without notice, the specications and information contained herein.


Part Number APT200GT60JRDQ4
Description Thunderbolt IGBT
Maker Microsemi Corporation
Total Page 9 Pages
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