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  Microsemi Electronic Components Datasheet  

APT60GF60JU2 Datasheet

Boost chopper NPT IGBT

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APT60GF60JU2 pdf
APT60GF60JU2
ISOTOP® Boost chopper
NPT IGBT
K
C
G
E
E
G
K
C
www.DataSheet4U.com
ISOTOP
VCES = 600V
IC = 60A @ Tc = 95°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
Non Punch Through (NPT) THUNDERBOLT IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
ISOTOP® Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC1
IC2
Continuous Collector Current
ICM Pulsed Collector Current
VGE Gate – Emitter Voltage
PD Maximum Power Dissipation
ILM RBSOA clamped Inductive load Current RG=11
IFAV Maximum Average Forward Current
Duty cycle=0.5
IFRMS RMS Forward Current (Square wave, 50% duty)
TC = 25°C
TC = 95°C
TC = 25°C
TC = 25°C
TC = 25°C
TC = 80°C
Max ratings
600
93
60
360
±20
378
360
30
39
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Unit
V
A
V
W
A
A
www.microsemi.com
1-8


  Microsemi Electronic Components Datasheet  

APT60GF60JU2 Datasheet

Boost chopper NPT IGBT

No Preview Available !

APT60GF60JU2 pdf
APT60GF60JU2
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES Zero Gate Voltage Collector Current
VCE(sat)
VGE(th)
IGES
Collector Emitter saturation Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 600V
Tj = 25°C
Tj = 125°C
80
2000
µA
VGE =15V
IC = 60A
Tj = 25°C
Tj = 125°C
2.0 2.5
2.8
V
VGE = VCE, IC = 500µA
345V
VGE = ±20V, VCE = 0V
±100 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Ets Total switching Losses
www.DataTSd(hoen)et4UT.cuormn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Ets Total switching Losses
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
VGS = 15V
VBus = 300V
IC = 60A
Resistive Switching (25°C)
VGE = 15V
VBus = 300V
IC = 60A
RG = 5
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 60A
RG = 5
Inductive Switching (150°C)
VGE = 15V
VBus = 400V
IC = 60A
RG = 5
Min Typ Max Unit
3125 3590
310 450 pF
180 310
257 410
19 30 nC
120 180
20 40
95 190
315 470
ns
245 490
26 50
63 125
395 590
ns
68 140
3.4 7 mJ
25 50
59 120
430 650
65 130
1.6 3.2
ns
2.4 4.8 mJ
4.0 8.0
www.microsemi.com
2-8


Part Number APT60GF60JU2
Description Boost chopper NPT IGBT
Maker Microsemi Corporation
Total Page 8 Pages
PDF Download
APT60GF60JU2 pdf
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