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  Microsemi Electronic Components Datasheet  

APTGT30DSK60T3G Datasheet

IGBT Power Module

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APTGT30DSK60T3G pdf
APTGT30DSK60T3G
Dual Buck chopper
Trench + Field Stop IGBT®
www.datasheet4u.com Power Module
13 14
Q1
18
19
22 7
Q2
CR1
23 8
CR2
11
10
29 30
15
31 32
R1 16
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
VCES = 600V
IC = 30A @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
High level of integration
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Each leg can be easily paralleled to achieve a
single buck of twice the current capability.
RoHS Compliant
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
TJ = 150°C
Max ratings
600
50
30
60
±20
90
60A @ 550V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5


  Microsemi Electronic Components Datasheet  

APTGT30DSK60T3G Datasheet

IGBT Power Module

No Preview Available !

APTGT30DSK60T3G pdf
APTGT30DSK60T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
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ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 600V
250 µA
VGE =15V
IC = 30A
Tj = 25°C
Tj = 150°C
1.5 1.9
1.7
V
VGE = VCE , IC = 400µA
VGE = 20V, VCE = 0V
5.0 5.8 6.5 V
300 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 30A
RG = 10
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 30A
RG = 10
VGE = ±15V
VBus = 300V
IC = 30A
RG = 10
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
1600
110
50
110
45
200
40
120
50
250
60
0.16
0.3
0.7
1.05
pF
ns
ns
mJ
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=600V
Tj = 25°C
Tj = 150°C
600
V
250
500
µA
IF DC Forward Current
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Er Reverse Recovery Energy
IF = 30A
VGE = 0V
IF = 30A
VR = 300V
di/dt =1800A/µs
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
30
1.6 2
1.5
100
150
1.5
3.1
0.34
0.75
A
V
ns
µC
mJ
www.microsemi.com
2-5


Part Number APTGT30DSK60T3G
Description IGBT Power Module
Maker Microsemi Corporation
Total Page 5 Pages
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APTGT30DSK60T3G pdf
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