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  Microsemi Electronic Components Datasheet  

MSAGA11F120D Datasheet

Fast IGBT Die

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MSAGA11F120D pdf
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2830 S. Fairview Street
Santa Ana, CA 92704
Phone: (714) 979-8220
Fax: (714) 559-5989
DESCRIPTION:
N-Channel enhancement mode high density IGBT die
Passivation: Polyimide, 20 um, over Silicon Nitride, .8um
Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical.
Collector/Gate Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach
FEATURES:
Low Forward Voltage Drop, Low Tail Current
Avalanche and Surge Rated
High Freq. Switching to 20KHz
Ultra Low Leakage Current
RBSOA and SCSOA Rated
Available with Lot Acceptance Testing Spec MSAGA11F120DL, "-L" Suffix
MAXIMUM RATINGS:
MSAGA11F120D
Fast IGBT Die for Implantable
Cardio Defibrillator
Applications
55
35-50% of
ICM Max
10µs
4000µs
Time - µsec
SYMBOL
VCES
VCGR
VEG
VGE
IC1
IC2
ICM
ICM1
ICM2
ICsurge2
EAS
PD
TJ, TSTG
PARAMETER
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20K)
Emitter-Collector Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Surge Current (10µs x 4ms double exponential, see figure 2)
Pulsed Collector Current ¬ @ TC = 25°C
Pulsed Collector Current ¬ @ TC = 110°C
Surge Current: tp= 2 us (ton= 1.5 µs; toff= 0.5 µs to 50% decay), 10 pulses, duty
cycle= 1:2,500,000 (12 pulses/minute)
Single Pulse Avalanche Energy -
Total Power Dissipation
Operating and Storage: Junction Temperature Range
STATIC ELECTRICAL CHARACTERISTICS:
SYMBOL CHARACTERISTIC / TEST CONDITIONS
BVCES
RBVCES
VGE(TH)
VCE (ON)
ICES
IGES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.5mA)
Collector-Emitter Reverse Breakdown Voltage® (VGE = 20V, IC = 10mA)
Gate Threshold Voltage (VCE = VGE, IC = 350µA, TJ = 37°C
Gate Threshold Voltage (VCE = VGE, IC = 350µA, TJ = 25°C
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, TJ = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, TJ = 37°C)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, TJ = 125°C)
Collector Cut-off Current (VCE = 80%VCES, VGE = 0V, TJ = 25°C)
Collector Cut-off Current (VCE = 80%VCES, VGE = 0V, TJ = 37°C)
Collector Cut-off Current (VCE = 80%VCES, VGE = 0V, TJ = 125°C)
Gate-Emitter Leakage Current (VGE = ±25V, VCE =0V)
Gate-Emitter Leakage Current (VGE = ±25V, VCE =0V), Tj= 37°C
MIN
1200
-15
4.5
VALUE
1200
1200
15
±20
22
11
55
44
22
400
10
125
-55 to 150
UNIT
Volts
Volts
Volts
Volts
Amps
Amps
Amps
Amps
Amps
Apk
mJ
Watts
°C
TYP MAX UNIT
Volts
Volts
5.7 Volts
5.5 6.5 Volts
3.1 3.5 Volts
3.5 Volts
4 4.5 Volts
0.02 10
uA
0.07 uA
1000
uA
2 ±100 nA
4 nA
MSC0947.PDF 2/5/99
All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, TC = 25°C unless otherwise specified


  Microsemi Electronic Components Datasheet  

MSAGA11F120D Datasheet

Fast IGBT Die

No Preview Available !

MSAGA11F120D pdf
www.DataSheet4U.com
DYNAMIC CHARACTERISTICS:
MSAGA11F120D
Fast IGBT Die for Implantable
Cardio Defibrillator
Applications
SYMBOL
Cies
Coes
Cros
Qg
Qge
Qgc
td (on)
tr
td (off)
tf
td (on)
tr
td (off)
tf
td (on)
tr
td (off)
tf
Eoff
gfe
CHARACTERISTIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ¯
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-off Delay Time
Rise Time
Turn-off Delay Time
(tsv)
(tsi)
Fall Time
(tfv)
(tfi)
Turn-off Switching Energy
Forward Transconductance
¬ Repetitive Rating: Pulse width limited by maximum junction temperature.
- IC = IC2, VCC = 50V, RCE = 25, L = 300µH, TJ = 25°C
® TJ = 150°C
¯ See MIL-STD-750 Method 3471
DIE PROBE PARAMETERS (100% TESTS):
TEST CONDITIONS
VGE = 0V
VCE = 25V
f = 1 MHz
VGE = 15V
VCC = 0.5VCES
IC = IC2
Resistive Switching (25°C)
VGE = 15V, VCC = 0.5VCES
IC = IC2
Re = 150
Inductive Switching (25°C)
VCLAMP(PEAK) = 0.5VCES
VGE = 15V, IC = IC2
RG = 150, TJ = +25°C
Inductive Switching (125°C)
VCLAMP(PEAK) = 0.5VCES
VGE = 15V, IC = IC2
RG = 150, TJ = +125°C
VCE =20V, IC = IC2
MIN
TYP
600
60
38
60
4
MAX
720
120
55
36
35
120
580
260
55 110
50 100
380 570
80 120
40
100
550
700
UNIT
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
160 ns
40
1
4.5 5
mJ
S
SYMBOL
CHARACTERISTIC / TEST CONDITIONS
MIN TYP MAX UNIT
BVCES
RBVCES
VGE(TH)
VCE (ON)
ICES
IGES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.5mA)
Collector-Emitter Reverse Breakdown Voltage ® (VGE = 15V, IC = 10mA)
Gate Threshold Voltage (VCE = 6.5 V, IC = 350µA, TJ = 25°C
Collector-Emitter On Voltage (VGE = 12V, IC = 1 A, TJ = 25°C)
Collector Cut-off Current (VCE = 1200 V, VGE = 0V, TJ = 25°C)
Gate-Emitter Leakage Current (VGE = ±20 V, VCE =0V)
1200
-15
4.6
1400
30
5.5
1.45
0.15
5
6.5
2.0
400
±120
Volts
uA
nA
MSC0947.PDF 2/5/99
All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, TC = 25°C unless otherwise specified


Part Number MSAGA11F120D
Description Fast IGBT Die
Maker Microsemi Corporation
Total Page 3 Pages
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